Properties of Thermally Grown Silicon Nitride Films

1967 ◽  
Vol 23 (3) ◽  
pp. 655-655 ◽  
Author(s):  
Kazuo Okada ◽  
Hideo Sakane ◽  
Yasoichi Sugioka
Keyword(s):  
Silicon Nitride ◽  
Silicon Nitride Films ◽  
Thermally Grown

Thermally grown silicon nitride films for high‐performance MNS devices

1978 ◽  
Vol 32 (5) ◽  
pp. 330-331 ◽  
Author(s):  
Takashi Ito ◽  
Takao Nozaki ◽  
Hideki Arakawa ◽  
Masaichi Shinoda
Keyword(s):  
Silicon Nitride ◽  
High Performance ◽  
Silicon Nitride Films ◽  
Thermally Grown

Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides

1999 ◽  
Vol 592 ◽  
Author(s):  
Sanjit Singh Dang ◽  
Christos G. Takoudis
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectric ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Total Charge ◽  
Process Improvements ◽  
Silicon Nitride Films ◽  
High Dielectric ◽  
Thermally Grown

ABSTRACTUltra-thin silicon nitride films are being studied for use as high-dielectric constant (highk) materials in future gate dielectric applications, as Complementary Metal-Oxide-Semiconductor (CMOS) transistors are scaled down to the sub-100nm regime. In this study, process modifications are proposed to reduce the total charge and interface trap densities in sub-3.5 nm-thick silicon nitride films, grown in NH3, in a conventional furnace at 900°C and 1 atm. It is shown that by employing a short (<1 min) oxynitridation step in NO, before nitridation, and oxynitridation/Ar-annealing steps, after nitridation, silicon nitride films can be thermally grown with a total charge density as low as about 2.5E10 q/cm2 and an interface trap density of about 2.1E11/(eV-cm2). Besides, the effect of using NO as opposed to N2O for oxynitridation steps is also discussed.

Characterization of low‐pressure chemical‐vapor‐deposited and thermally‐grown silicon nitride films

1982 ◽  
Vol 53 (1) ◽  
pp. 404-415 ◽  
Author(s):  
F. H. P. M. Habraken ◽  
A. E. T. Kuiper ◽  
A. v. Oostrom ◽  
Y. Tamminga ◽  
J. B. Theeten
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Thermally Grown

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

ChemInform Abstract: VERY THIN SILICON NITRIDE FILMS GROWN BY DIRECT THERMAL REACTION WITH NITROGEN

1978 ◽  
Vol 9 (28) ◽  
Author(s):  
T. ITO ◽  
S. HIJIYA ◽  
T. NOZAKI ◽  
H. ARAKAWA ◽  
M. SHINODA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Reaction ◽  
Silicon Nitride Films ◽  
Thin Silicon

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

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