X‐ray photoelectron spectroscopy and Auger spectroscopy studies of thin silicon nitride films thermally grown on silicon

1988 ◽  
Vol 6 (3) ◽  
pp. 1358-1362 ◽  
Author(s):  
M. A. Sobolewski ◽  
C. R. Helms
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Auger Spectroscopy ◽  
X Ray ◽  
Silicon Nitride Films ◽  
Thin Silicon ◽  
Spectroscopy Studies ◽  
Thermally Grown

X-ray photoelectron spectroscopy and x-ray excited Auger spectroscopy studies of manganese thiophosphate intercalated with sodium ions

2008 ◽  
Vol 104 (12) ◽  
pp. 123711 ◽  
Author(s):  
L. Silipigni ◽  
T. Quattrone ◽  
L. Schirò ◽  
V. Grasso ◽  
L. Monsù Scolaro ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Auger Spectroscopy ◽  
Sodium Ions ◽  
X Ray ◽  
Spectroscopy Studies

Estimation of the Thickness of Ultrathin Silicon Nitride Films by X-Ray Photoelectron Spectroscopy

1993 ◽  
Vol 32 (Part 1, No. 8) ◽  
pp. 3580-3583 ◽  
Author(s):  
Akiko Muto ◽  
Toshiyuki Mine ◽  
Masatoshi Nakazawa
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Silicon Nitride Films

Plasma Deposited Silicon Nitride Film Chemistry

1989 ◽  
Vol 165 ◽  
Author(s):  
Justin N. Chiang ◽  
Dennis W. Hess
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Gas Composition ◽  
Stainless Steel Mesh ◽  
Film Composition ◽  
X Ray ◽  
Silicon Nitride Films

AbstractThe structure and composition of plasma deposited (PD) silicon nitride thin films formed using NH3/SiH4, N2/SiH4, and N2/SiH4/H2, discharges are compared. The effect of introducing a DC grounded stainless steel mesh between the parallel electrodes is also discussed. Chemical structure and composition of these films are measured using X-ray Photoelectron Spectroscopy and Fourier Transform Infrared Spectroscopy. Significant changes in film composition are observed with changes in gas composition and with utilization of the screen. When the screen is invoked, variations in film composition are more pronounced for PD silicon nitride films formed using N2 as the nitrogen source. An increase in the N:Si ratio occurs for all films deposited using the screen. This compositional change is reflected in increased N-H and decreased Si-H bonding. Similar changes are also observed in films deposited from a N2/SiH4/H2 discharge compared to films formed using a N2/SiH4 discharge.

Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence

2001 ◽  
Vol 56 (11) ◽  
pp. 2321-2330 ◽  
Author(s):  
G. Vereecke ◽  
S. Arnauts ◽  
P. Van Doorne ◽  
K. Kenis ◽  
B. Onsia ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Trace Metals ◽  
Total Reflection ◽  
X Ray ◽  
Silicon Nitride Films ◽  
Thin Silicon

ChemInform Abstract: VERY THIN SILICON NITRIDE FILMS GROWN BY DIRECT THERMAL REACTION WITH NITROGEN

1978 ◽  
Vol 9 (28) ◽  
Author(s):  
T. ITO ◽  
S. HIJIYA ◽  
T. NOZAKI ◽  
H. ARAKAWA ◽  
M. SHINODA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Reaction ◽  
Silicon Nitride Films ◽  
Thin Silicon
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