Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe

2005 ◽  
Vol 44 (11) ◽  
pp. 8019-8022 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Noritaka Usami ◽  
Wugen Pan ◽  
Kozo Fujiwara ◽  
Kazuo Nakajima
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Dark Current ◽  
Dark Current Density

scholarly journals A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

2013 ◽  
Vol 62 (16) ◽  
pp. 168801
Author(s):  
Zhao Shou-Ren ◽  
Huang Zhi-Peng ◽  
Sun Lei ◽  
Sun Peng-Chao ◽  
Zhang Chuan-Jun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Schottky Barrier ◽  
Current Density ◽  
Dark Current ◽  
Dark Current Density ◽  
Cdte Solar Cells

Short-wave infrared detector with double barrier structure and low dark current density

2016 ◽  
Vol 14 (2) ◽  
pp. 022501-22505
Author(s):  
Yu Dong Yu Dong ◽  
Guanglong Wang Guanglong Wang ◽  
Haiqiao Ni Haiqiao Ni ◽  
Kangming Pei Kangming Pei ◽  
Zhongtao Qiao Zhongtao Qiao ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Infrared Detector ◽  
Short Wave ◽  
Barrier Structure ◽  
Dark Current Density ◽  
Double Barrier ◽  
Short Wave Infrared ◽  
Double Barrier Structure

scholarly journals Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 76
Author(s):  
U. Zavala-Moran ◽  
M. Bouschet ◽  
J. Perez ◽  
R. Alchaar ◽  
S. Bernhardt ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Spectral Response ◽  
Minority Carrier Lifetime ◽  
Peak Position ◽  
Type Ii ◽  
Dark Current Density ◽  
Time Resolved ◽  
Midwave Infrared ◽  
Electrical Characterizations

In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10−5 A/cm2 at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes.

scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

A Novel Surface Preparation and Post-Etch Removal Technique for InGaAs Sidewalls

1997 ◽  
Vol 477 ◽  
Author(s):  
S. A. Tabatabaei ◽  
G. A. Porkolab ◽  
S. Agarwala ◽  
F. G. Johnson ◽  
S. A. Merritt ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
High Speed ◽  
Surface Preparation ◽  
Reverse Bias Voltage ◽  
Dark Current Density ◽  
Term Stability ◽  
Long Term Stability ◽  
Removal Technique

ABSTRACTThis paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparation, and surface passivation on the performance of high speed InGaAs detectors. Dark current density for circular diodes with a diameter size varying between 10 and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness of various surface preparation techniques was studied by measuring the immediate improvement in dark current density, as well as its long-term stability. The benefits of this new technique compared to other techniques we have investigated include improved device characteristics, long-term stability, as well as a much less critical process to achieve optimum surface properties.

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