Short-wave infrared detector with double barrier structure and low dark current density

2016 ◽  
Vol 14 (2) ◽  
pp. 022501-22505
Author(s):  
Yu Dong Yu Dong ◽  
Guanglong Wang Guanglong Wang ◽  
Haiqiao Ni Haiqiao Ni ◽  
Kangming Pei Kangming Pei ◽  
Zhongtao Qiao Zhongtao Qiao ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Infrared Detector ◽  
Short Wave ◽  
Barrier Structure ◽  
Dark Current Density ◽  
Double Barrier ◽  
Short Wave Infrared ◽  
Double Barrier Structure

scholarly journals Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 76
Author(s):  
U. Zavala-Moran ◽  
M. Bouschet ◽  
J. Perez ◽  
R. Alchaar ◽  
S. Bernhardt ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Spectral Response ◽  
Minority Carrier Lifetime ◽  
Peak Position ◽  
Type Ii ◽  
Dark Current Density ◽  
Time Resolved ◽  
Midwave Infrared ◽  
Electrical Characterizations

In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10−5 A/cm2 at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes.

scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

THE WIDTH RATIO OF TWO BARRIERS IN RESONANT TUNNELING

2003 ◽  
Vol 17 (03) ◽  
pp. 105-109 ◽  
Author(s):  
MASATO OHMUKAI
Keyword(s):  
Transmission Coefficient ◽  
Resonant Tunneling ◽  
Width Ratio ◽  
Total Width ◽  
Barrier Width ◽  
Barrier Structure ◽  
Double Barrier ◽  
Two Parameters ◽  
Double Barrier Structure ◽  
Two Barriers

Numerical calculations by a transfer matrix method have been performed to obtain the transmission coefficient of rectangular double barrier structures. The dependence of the well width, barrier width and the barrier height was systematically investigated. When the width ratio of the two barriers was varied on condition that a total width was fixed, the transmission coefficient at a resonance is varied while that at a valley region is not. It is concluded that the resonant tunneling is characterized by two parameters: total width and the width ratio. Our results clarify the transition of transmission spectrum from a single barrier to a double barrier structure.

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