Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device

2004 ◽  
Vol 43 (4B) ◽  
pp. 2199-2202
Author(s):  
Hyun-Ho Kim ◽  
Jung-Hoon Park ◽  
Yoon-Jong Song ◽  
Nak-Won Jang ◽  
Heung-Jin Joo ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Capacitor Structure

Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics

2013 ◽  
Vol 14 (2) ◽  
pp. 505-510 ◽  
Author(s):  
D. Mao ◽  
I. Mejia ◽  
A.L. Salas-Villasenor ◽  
M. Singh ◽  
H. Stiegler ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Capacitor Structure

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device

2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
Mousam Charan Sahu ◽  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
...  
Keyword(s):  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Anatase Tio2 ◽  
Access Memory ◽  
Conducting Filament ◽  
Valence Change

Plasma Etching for Fabricating the Concave-Type DRAM Capacitors

2004 ◽  
Vol 449-452 ◽  
pp. 353-356
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Plasma Etching ◽  
Barium Strontium Titanate ◽  
Bottom Electrode ◽  
Random Access ◽  
Random Access Memory ◽  
Metal Electrode ◽  
Access Memory ◽  
Barium Strontium ◽  
Fabrication Procedure ◽  
Capacitor Structure

The usage of barium strontium titanate (BST) capacitor have recently been considered in the fabrication of dynamic random access memory (DRAM) device. In this study, in order to avoid the difficulties of high aspect ratio etching of bottom electrode in the conventional stack-typecapacitor structure, we suggest to introduce a concave-type capacitor structure. The fabrication procedure of the two kinds of the concave capacitor cells, Pt/BST/Pt and Ru/BST/Ru are explained. We have studied on the metal electrode etching in the concave structure and have discussed the patterning issues in fabricating the capacitor structures.

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