scholarly journals Random-Oriented (Bi,La)4Ti3O12Thin Film Deposited by Pulsed-DC Sputtering Method on Ferroelectric Random Access Memory Device

2011 ◽  
Vol 12 (6) ◽  
pp. 258-261 ◽  
Author(s):  
Youn-Ki Lee ◽  
Sung-Lim Ryu ◽  
Soon-Yong Kweon ◽  
Seung-Jin Yeom ◽  
Hee-Bok Kang
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Dc Sputtering ◽  
Ferroelectric Random Access Memory ◽  
Pulsed Dc

Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device

2004 ◽  
Vol 43 (4B) ◽  
pp. 2199-2202
Author(s):  
Hyun-Ho Kim ◽  
Jung-Hoon Park ◽  
Yoon-Jong Song ◽  
Nak-Won Jang ◽  
Heung-Jin Joo ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Capacitor Structure

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device

2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
Mousam Charan Sahu ◽  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
...  
Keyword(s):  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Anatase Tio2 ◽  
Access Memory ◽  
Conducting Filament ◽  
Valence Change
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