High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition
1995 ◽
Vol 34
(Part 1, No. 2A)
◽
pp. 476-481
◽
1993 ◽
Vol 32
(Part 1, No. 1B)
◽
pp. 438-441
◽
1995 ◽
Vol 42
(5)
◽
pp. 795-803
◽
2008 ◽
Vol 47
(4)
◽
pp. 2548-2550
◽
2003 ◽
Vol 32
(5)
◽
pp. 407-410
◽
2001 ◽
Vol 19
(5)
◽
pp. 1782
◽
1999 ◽
Vol 38
(Part 2, No. 10A)
◽
pp. L1099-L1101
◽
1994 ◽
Vol 12
(5)
◽
pp. 3006
◽
2003 ◽
Vol 42
(Part 1, No. 12)
◽
pp. 7256-7258
◽