Improved C–V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

Masaru Kadoshima; Koji Akiyama; Katsuhiko Yamamoto; Hideaki Fujiwara; Tetsuji Yasuda; Toshihide Nabatame; Akira Toriumi

doi:10.1116/1.1835311

Improved C–V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1835311 ◽

2005 ◽

Vol 23 (1) ◽

pp. 42 ◽

Cited By ~ 14

Author(s):

Masaru Kadoshima ◽

Koji Akiyama ◽

Katsuhiko Yamamoto ◽

Hideaki Fujiwara ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metal Oxide Semiconductor ◽

Tantalum Nitride ◽

Oxide Semiconductor ◽

Gate Electrodes ◽

Pressure Chemical

Download Full-text

Thin oxynitride film metal‐oxide‐semiconductor transistors prepared by low‐pressure rapid thermal chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.110067 ◽

1993 ◽

Vol 63 (26) ◽

pp. 3619-3621 ◽

Cited By ~ 11

Author(s):

P. K. McLarty ◽

W. L. Hill ◽

X.‐L. Xu ◽

V. Misra ◽

J. J. Wortman ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Chemical Vapor Deposition ◽

Oxynitride Film

Download Full-text

Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.438 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 438-441 ◽

Cited By ~ 35

Author(s):

Kinya Goto ◽

Junichi Murota ◽

Takahiro Maeda ◽

Reiner SchÜtz ◽

Kiyohito Aizawa ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Pressure Chemical ◽

Effect Transistor

Download Full-text

On the mobility of n‐channel metal–oxide–semiconductor transistors prepared by low‐pressure rapid thermal chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114149 ◽

1995 ◽

Vol 66 (1) ◽

pp. 73-75 ◽

Cited By ~ 2

Author(s):

P. K. McLarty ◽

V. Misra ◽

W. Hill ◽

J. J. Wortman ◽

J. R. Hauser ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Chemical Vapor Deposition

Download Full-text

Reduced pressure chemical vapor deposition of Si/Si1−yCy heterostructures forn-type metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.1497451 ◽

2002 ◽

Vol 92 (5) ◽

pp. 2368-2373 ◽

Cited By ~ 17

Author(s):

J. M. Hartmann ◽

T. Ernst ◽

V. Loup ◽

F. Ducroquet ◽

G. Rolland ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Reduced Pressure ◽

Pressure Chemical

Download Full-text

Reduced pressure–chemical vapor deposition of high Ge content Si1−xGex and high C content Si1−yCy layers for advanced metal oxide semiconductor transistors

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.01.076 ◽

2005 ◽

Vol 277 (1-4) ◽

pp. 114-123 ◽

Cited By ~ 21

Author(s):

J.M. Hartmann ◽

Y. Bogumilowicz ◽

F. Andrieu ◽

P. Holliger ◽

G. Rolland ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Reduced Pressure ◽

Pressure Chemical

Download Full-text

P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l1099 ◽

1999 ◽

Vol 38 (Part 2, No. 10A) ◽

pp. L1099-L1101 ◽

Cited By ~ 4

Author(s):

Kun-Ming Chen ◽

Hsiang-Jen Huang ◽

Guo-Wei Huang ◽

Chun-Yen Chang ◽

Liang-Po Chen

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

High Vacuum ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Ultra High Vacuum ◽

Oxide Semiconductor

Download Full-text

A New Tungsten Gate Metal Oxide Semiconductor Capacitor Using a Chemical Vapor Deposition Process

Journal of The Electrochemical Society ◽

10.1149/1.1837387 ◽

1997 ◽

Vol 144 (1) ◽

pp. 214-217 ◽

Cited By ~ 8

Author(s):

Wen‐Kuan Yeh ◽

Yeu‐Cherng Shiau ◽

Mao‐Chieh Chen

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Chemical Vapor Deposition Process ◽

Metal Oxide Semiconductor Capacitor ◽

Vapor Deposition Process

Download Full-text

Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications

Nanotechnology ◽

10.1088/1361-6528/ab2d4a ◽

2019 ◽

Vol 30 (40) ◽

pp. 405201

Author(s):

Kang-Ping Peng ◽

Tsung Lin Huang ◽

Tom George ◽

Horng-Chih Lin ◽

Pei-Wen Li

Keyword(s):

Metal Oxide ◽

Chemical Vapor ◽

Complementary Metal Oxide Semiconductor ◽

Low Pressure ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Chemical Vapor Deposited ◽

Pressure Chemical

Download Full-text

ChemInform Abstract: Preparation of Device-Quality SiO2 Thin Films by Remote Plasma- Enhanced Chemical Vapor Deposition (PECVD): Applications in Metal- Oxide-Semiconductor (MOS) Devices

ChemInform ◽

10.1002/chin.199636322 ◽

2010 ◽

Vol 27 (36) ◽

pp. no-no

Author(s):

G. LUCOVSKY

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

Mos Devices

Download Full-text

Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

Applied Physics Letters ◽

10.1063/1.2001757 ◽

2005 ◽

Vol 87 (5) ◽

pp. 051922 ◽

Cited By ~ 105

Author(s):

N. Lu ◽

W. Bai ◽

A. Ramirez ◽

C. Mouli ◽

A. Ritenour ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text