Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth

1991 ◽  
Vol 30 (Part 1, No. 4) ◽  
pp. 802-808 ◽  
Author(s):  
Hiroshi Yamaguchi ◽  
Yoshiji Horikoshi
Keyword(s):  
Free Atmosphere ◽  
Step Flow ◽  
Migration Enhanced Epitaxy ◽  
Step Flow Growth

Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas‐source migration enhanced epitaxy

1992 ◽  
Vol 61 (9) ◽  
pp. 1054-1056 ◽  
Author(s):  
H. Asahi ◽  
T. Hisaka ◽  
S. G. Kim ◽  
T. Kaneko ◽  
S. J. Yu ◽  
...  
Keyword(s):  
Vicinal Surfaces ◽  
Step Flow ◽  
Gas Source ◽  
Migration Enhanced Epitaxy ◽  
Step Flow Growth

Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy

1989 ◽  
Vol 28 (Part 2, No. 8) ◽  
pp. L1456-L1459 ◽  
Author(s):  
Hiroshi Yamaguchi ◽  
Yoshiji Horikoshi
Keyword(s):  
Step Flow ◽  
Migration Enhanced Epitaxy ◽  
Step Flow Growth

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

Growth of (Zn)CdSe quantum structures on vicinal GaAs(001) substrates: step flow growth versus strain effects

2000 ◽  
Vol 214-215 ◽  
pp. 606-609 ◽  
Author(s):  
T Passow ◽  
H Heinke ◽  
D Kayser ◽  
K Leonardi ◽  
D Hommel
Keyword(s):  
Quantum Structures ◽  
Strain Effects ◽  
Step Flow ◽  
Step Flow Growth ◽  
Versus Strain

Development of Cross-Hatch Morphology During Growth of Lattice Mismatched Layers

2001 ◽  
Vol 673 ◽  
Author(s):  
A. Maxwell Andrews ◽  
J.S. Speck ◽  
A.E. Romanov ◽  
M. Bobeth ◽  
W. Pompe
Keyword(s):  
Misfit Dislocation ◽  
Film Growth ◽  
Strain Relaxation ◽  
Dislocation Generation ◽  
Force Microscopy ◽  
Step Flow ◽  
Atomic Force ◽  
Subsequent Step ◽  
Step Flow Growth ◽  
Lateral Scale

ABSTRACTAn approach is developed for understanding the cross-hatch morphology in lattice mismatched heteroepitaxial film growth. It is demonstrated that both strain relaxation associated with misfit dislocation formation and subsequent step elimination (e.g. by step-flow growth) are responsible for the appearance of nanoscopic surface height undulations (0.1-10 nm) on a mesoscopic (∼100 nm) lateral scale. The results of Monte Carlo simulations for dislocation- assisted strain relaxation and subsequent film growth predict the development of cross-hatch patterns with a characteristic surface undulation magnitude ∼50 Å in an approximately 70% strain relaxed In0.25Ga0.75As layers. The model is supported by atomic force microscopy (AFM) observations of cross-hatch morphology in the same composition samples grown well beyond the critical thickness for misfit dislocation generation.

Nanotube self-organization: Formation by step-flow growth

1999 ◽  
Vol 74 (2) ◽  
pp. 194-196 ◽  
Author(s):  
Oleg A. Louchev ◽  
Yoichiro Sato
Keyword(s):  
Self Organization ◽  
Step Flow ◽  
Step Flow Growth

Step‐flow growth on strained surfaces

1993 ◽  
Vol 63 (17) ◽  
pp. 2348-2350 ◽  
Author(s):  
C. Ratsch ◽  
A. Zangwill
Keyword(s):  
Step Flow ◽  
Step Flow Growth

Step-flow growth of perovskite PbTiO 3 thin films epitaxially grown on a miscut SrTiO 3 substrate

1998 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Yoko Haneda ◽  
Toshifumi Sato ◽  
Hideaki Adachi ◽  
Isaku Kanno ◽  
...  
Keyword(s):  
Thin Films ◽  
Step Flow ◽  
Step Flow Growth

Controlling the morphology transition between step-flow growth and step-bunching growth

2017 ◽  
Vol 478 ◽  
pp. 187-192 ◽  
Author(s):  
Konrad Bellmann ◽  
Udo W. Pohl ◽  
Christian Kuhn ◽  
Tim Wernicke ◽  
Michael Kneissl
Keyword(s):  
Step Bunching ◽  
Morphology Transition ◽  
Step Flow ◽  
Step Flow Growth
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