Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas‐source migration enhanced epitaxy

1992 ◽  
Vol 61 (9) ◽  
pp. 1054-1056 ◽  
Author(s):  
H. Asahi ◽  
T. Hisaka ◽  
S. G. Kim ◽  
T. Kaneko ◽  
S. J. Yu ◽  
...  
Keyword(s):  
Vicinal Surfaces ◽  
Step Flow ◽  
Gas Source ◽  
Migration Enhanced Epitaxy ◽  
Step Flow Growth

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

Dynamics of Periodic Step-Bunching During Growth on Vicinal GaAs(110) Surfaces: Computer Simulations and Experiments

1993 ◽  
Vol 312 ◽  
Author(s):  
Mohan Krishnamurthy ◽  
D. R. M. Williams ◽  
P. M. Petroff
Keyword(s):  
Computer Simulations ◽  
Molecular Beam ◽  
Vicinal Surfaces ◽  
One Dimensional ◽  
Step Flow ◽  
Molecular Beam Epitaxial ◽  
Diffusion Parameters ◽  
Molecular Beam Epitaxial Growth ◽  
Step Flow Growth ◽  
And Diffusion

AbstractMolecular beam epitaxial growth on GaAs(110) vicinal surfaces results in the formation of periodic micro-facets. We compare experimental results with computer simulations of a simple one dimensional step-flow growth model. The simulations show that preferential adatom attachment to the down step in a step array results in the destruction of step uniformity. A kinetic limitation due to adatom diffusion length along the terraces leads to stabilization of a periodic array of step-bunches. We extend our simulations to show the effects of the attachment and diffusion parameters on the dynamics of facet evolution.

Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy

1989 ◽  
Vol 28 (Part 2, No. 8) ◽  
pp. L1456-L1459 ◽  
Author(s):  
Hiroshi Yamaguchi ◽  
Yoshiji Horikoshi
Keyword(s):  
Step Flow ◽  
Migration Enhanced Epitaxy ◽  
Step Flow Growth

scholarly journals Breakdown of metastable step-flow growth on vicinal surfaces induced by nucleation

2005 ◽  
Vol 72 (24) ◽  
Author(s):  
Daniele Vilone ◽  
Claudio Castellano ◽  
Paolo Politi
Keyword(s):  
Vicinal Surfaces ◽  
Step Flow ◽  
Step Flow Growth

Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures

2006 ◽  
Vol 21 (11) ◽  
pp. 2801-2809 ◽  
Author(s):  
C. Chen ◽  
M.C. Plante ◽  
C. Fradin ◽  
R.R. LaPierre
Keyword(s):  
Molecular Beam ◽  
Stacking Faults ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Step Flow ◽  
Gas Source ◽  
Constant Diameter ◽  
Step Flow Growth ◽  
Tapered Region

GaP–GaAsP segmented nanowires (NWs), with diameters ranging between 20 and 500 nm and lengths between 0.5 and 2 μm, were catalytically grown from Au particles on a GaAs (111)B substrate in a gas source molecular beam epitaxy system. The morphology of the NWs was either pencil-shaped with a tapered tip or rod-shaped with a constant diameter along the entire length. Stacking faults were observed for most NWs with diameters greater than 30 nm, but thinner ones tended to exhibit fewer defects. Moreover, stacking faults were more likely found in GaAsP than in GaP. The composition of the pencil NWs exhibited a core–shell structure at the interface region, and rod-shaped NWs resulted in planar and atomically abrupt heterointerfaces. A detailed growth mechanism is presented based on a layer-by-layer growth mode for the rod-shaped NWs and a step-flow growth mode for the tapered region of the pencil NWs.

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