DC Bias Effects on Growth of a-Ge:H in Coaxial-Type ECR Plasma

1989 ◽  
Vol 28 (Part 1, No. 5) ◽  
pp. 849-855 ◽  
Author(s):  
Takeshi Aoki ◽  
Seiichi Kato ◽  
Masataka Hirose ◽  
Yasuo Nishikawa
Keyword(s):  
Ecr Plasma ◽  
Dc Bias

Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen

1995 ◽  
Vol 395 ◽  
Author(s):  
L. Zhang ◽  
J. Ramer ◽  
J. Brown ◽  
K. Zheng ◽  
L.F. Lester ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Defect Density ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
Good Surface ◽  
Dc Bias ◽  
Gate Recess

ABSTRACTElectron cyclotron resonance (ECR) plasma etching characteristics of gallium nitride (GaN) are investigated using low pressure (4-10 mTorr) SiCl4/Ar and Cl2/H2/Ar ECR discharges. The purpose of this effort is to develop a dry etching process for making laser mirrors on GaN and to examine dry etching processes of GaN that do not require hydrogen, which is known to cause carrier compensation in GaN. The etch rate is found to increase near-linearly with increasing DC bias, and a minimum DC bias of 100V is required to initiate etching in SiCl4/Ar. We have also found that the material quality significantly affects the etch rate. The latter decreases with x-ray rocking curve half-width and increases with defect density. A reasonable etch rate of 660Ǻ/min and good surface morphologies obtained in SiCl/Ar ECR etching make this process suitable for gate recess of an FET. An etch rate of 5270Ǻ/min has been achieved in Cl2/H2/Ar plasmas. This is the highest reported etch rate of GaN so far. The smooth and vertical etch sidewalls (etch to mask selectivity of 16 is obtained) make this process promising for dry-etched laser mirrors on GaN.

Formation of Carbon Films from C2H6–H2by ECR Plasma CVD by Application of a Negative DC Bias

1993 ◽  
Vol 66 (3) ◽  
pp. 975-977
Author(s):  
Kazunori Maruyama ◽  
Kiichiro Kamata ◽  
Masaki Yamamoto ◽  
Toshiyuki Morinaga ◽  
Kozo Kuchitsu
Keyword(s):  
Carbon Films ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Dc Bias

Analysis of magneto rheological elastomers for energy harvesting systems

2020 ◽  
Vol 64 (1-4) ◽  
pp. 439-446
Author(s):  
Gildas Diguet ◽  
Gael Sebald ◽  
Masami Nakano ◽  
Mickaël Lallart ◽  
Jean-Yves Cavaillé
Keyword(s):  
Magnetic Field ◽  
Energy Harvesting ◽  
Shear Strain ◽  
Magnetic Induction ◽  
Magnetic Particles ◽  
Homogeneous Magnetic Field ◽  
Electrical Signal ◽  
Harvesting Systems ◽  
Dc Bias ◽  
Magneto Rheological

Magneto Rheological Elastomers (MREs) are composite materials based on an elastomer filled by magnetic particles. Anisotropic MRE can be easily manufactured by curing the material under homogeneous magnetic field which creates column of particles. The magnetic and elastic properties are actually coupled making these MREs suitable for energy conversion. From these remarkable properties, an energy harvesting device is considered through the application of a DC bias magnetic induction on two MREs as a metal piece is applying an AC shear strain on them. Such strain therefore changes the permeabilities of the elastomers, hence generating an AC magnetic induction which can be converted into AC electrical signal with the help of a coil. The device is simulated with a Finite Element Method software to examine the effect of the MRE parameters, the DC bias magnetic induction and applied shear strain (amplitude and frequency) on the resulting electrical signal.

Effect of DC-Bias Current in Perpendicular Magnetic Recording

2004 ◽  
Vol 28 (3) ◽  
pp. 275-278
Author(s):  
K. Taguchi ◽  
S. Takahashi ◽  
K. Yamakawa ◽  
K. Ouchi
Keyword(s):  
Magnetic Recording ◽  
Bias Current ◽  
Perpendicular Magnetic Recording ◽  
Dc Bias

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

2014 ◽  
Vol E97.C (5) ◽  
pp. 413-418 ◽  
Author(s):  
Dae-Hee HAN ◽  
Shun-ichiro OHMI ◽  
Tomoyuki SUWA ◽  
Philippe GAUBERT ◽  
Tadahiro OHMI
Keyword(s):  
Surface Roughness ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering

Probing pure and mixed neon ECR plasma—An effort for understanding the mechanism of isotope anomaly and gas mixing effect

2021 ◽  
Vol 28 (3) ◽  
pp. 033508
Author(s):  
Puneeta Tripathi ◽  
Shushant Kumar Singh ◽  
Pravin Kumar
Keyword(s):  
Gas Mixing ◽  
Mixing Effect ◽  
Ecr Plasma
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