Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111)

1996 ◽  
Vol 74 (S1) ◽  
pp. 108-111 ◽  
Author(s):  
Y. Ababou ◽  
P. Desjardins ◽  
R. A. Masut ◽  
A. Yelon ◽  
G. L'Espérance
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Average Dislocation Density ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Reaction Constant ◽  
Antiphase Domains

We report the growth of InP layers using low-pressure metalorganic vapor phase epitaxy on buffered HF-treated Si(111) surfaces, both normally oriented and 3.8° off, toward [Formula: see text]. The InP layers grown on normally oriented Si(111) show the presence of roughly regular terraces, which may be associated with antiphase domains, whose width increases rapidly with the epilayer thickness. The average dislocation density at the top surface is as low as 4 × 105 cm−2 for 4.8 μm thick epilayers. Transmission electron microscopy observations show a rapid decrease of threading dislocation densities with increasing distance from the interface, due principally to their coalescence, as determined from X-ray diffraction analysis. This indicates a high reaction constant between dislocations, of 1.8 × 10−5 cm.

High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices

2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Order Of Magnitude ◽  
Cost Efficient ◽  
Patterned Sapphire Substrates

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

scholarly journals X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

2014 ◽  
Vol 115 (7) ◽  
pp. 073507 ◽  
Author(s):  
Viktor S. Kopp ◽  
Vladimir M. Kaganer ◽  
Marina V. Baidakova ◽  
Wsevolod V. Lundin ◽  
Andrey E. Nikolaev ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
X Ray ◽  
Dislocation Densities

N-rich GaNAs with High As Content Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
Akitaka Kimura ◽  
H. F. Tang ◽  
C. A. Paulson ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Single Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
Specular Surfaces ◽  
Rich Side ◽  
Absorption Measurements

ABSTRACTGaN1-yAsy epitaxial alloys on the N-rich side with high As content were grown by metalorganic vapor phase epitaxy. They had specular surfaces and the single-phase epitaxial nature was confirmed by X-ray diffraction. The As incorporation increased through both a decrease in the growth temperature and V/III ratio. These trends were similar to that found in other III-V alloy systems which exhibit a large miscibility gap and the anion incorporation was considered to have been limited kinetically under the conditions of the low V/III ratio. The range of achieved As content was extended up to y=0.067, which is a composition well within the miscibility gap. The As-content dependence of the band gap energy was determined by optical absorption measurements and large bowing parameter of 16.8 ± 0.9 eV was determined.

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

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