X‐ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor‐phase epitaxy

1994 ◽  
Vol 75 (5) ◽  
pp. 2426-2433 ◽  
Author(s):  
Q. Liu ◽  
A. Lindner ◽  
F. Scheffer ◽  
W. Prost ◽  
F. J. Tegude
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Highly Strained

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy

1997 ◽  
Vol 36 (Part 2, No. 12B) ◽  
pp. L1625-L1627 ◽  
Author(s):  
Wei-Kuo Chen ◽  
Yung-Chung Pan ◽  
Heng-Ching Lin ◽  
Jehn Ou ◽  
Wen-Hsiung Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray

Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi
Keyword(s):  
Crystal Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Carrier Gases

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.

High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Chaudhuri ◽  
M. Hooe Ng ◽  
D. D. Koleske ◽  
A. E. Wickenden ◽  
R. L. Henry
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Dislocation Density ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
X Ray

ABSTRACTHigh resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY

2017 ◽  
Vol 24 (08) ◽  
pp. 1750105 ◽  
Author(s):  
R. BOUSSAHA ◽  
T. MZOUGHI ◽  
H. FITOURI ◽  
A. REBEY ◽  
B. EL JANI
Keyword(s):  
Vapor Phase ◽  
Morphological Evolution ◽  
Quantitative Description ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Substrates

In this work, we discuss the growth of dilute InAsBi nanostructures grown by metalorganic vapor phase epitaxy on GaAs substrates. The surface morphology of InAsBi nanostructures is carefully investigated, as a function of the growth temperature, by scanning electronic microscopy and atomic force microscopy. (004) High-resolution X-ray diffraction configuration has been used to characterize the crystalline quality and Bi incorporation in the InAsBi films. Low temperature and low Bi flow favor the formation of elongated nanostructures during growth. We give a quantitative description of the elemental processes for the formation of these nanostructures. Our description is based on the Tersoff and Tromp theoretical model.

Sign in / Sign up

Export Citation Format

Share Document