Evidence by Raman spectroscopy and x‐ray diffraction of a strong influence of H2O traces on the metalorganic vapor phase epitaxy of GaAs on Si

1987 ◽  
Vol 51 (17) ◽  
pp. 1352-1354 ◽  
Author(s):  
A. Freundlich ◽  
A. Leycuras ◽  
J. C. Grenet ◽  
C. Vèrié ◽  
Pham V. Huong
Keyword(s):  
Raman Spectroscopy ◽  
Vapor Phase ◽  
Strong Influence ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas On Si

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Chaudhuri ◽  
M. Hooe Ng ◽  
D. D. Koleske ◽  
A. E. Wickenden ◽  
R. L. Henry
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Dislocation Density ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
X Ray

ABSTRACTHigh resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY

2017 ◽  
Vol 24 (08) ◽  
pp. 1750105 ◽  
Author(s):  
R. BOUSSAHA ◽  
T. MZOUGHI ◽  
H. FITOURI ◽  
A. REBEY ◽  
B. EL JANI
Keyword(s):  
Vapor Phase ◽  
Morphological Evolution ◽  
Quantitative Description ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Substrates

In this work, we discuss the growth of dilute InAsBi nanostructures grown by metalorganic vapor phase epitaxy on GaAs substrates. The surface morphology of InAsBi nanostructures is carefully investigated, as a function of the growth temperature, by scanning electronic microscopy and atomic force microscopy. (004) High-resolution X-ray diffraction configuration has been used to characterize the crystalline quality and Bi incorporation in the InAsBi films. Low temperature and low Bi flow favor the formation of elongated nanostructures during growth. We give a quantitative description of the elemental processes for the formation of these nanostructures. Our description is based on the Tersoff and Tromp theoretical model.

Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Yi Fu ◽  
Xianfeng Ni ◽  
Jingqiao Xie ◽  
N Biyikli ◽  
Qian Fan ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Etching Rate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Density ◽  
Sticking Coefficient ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTGrowth and polarity control of GaN and AlN on carbon-face SiC (C-SiC) by metalorganic vapor phase epitaxy (MOVPE) are reported. The polarities of GaN and AlN layers were found to be strongly dependent on the pre-growth treatment of C-SiC substrates. A pre-flow of trimethyaluminum (TMAl) or a very low NH3/TMAl ratio results in Al(Ga)-polarity layers on C-SiC. Otherwise, N-polarity layers resulted. The polarities of AlN and GaN layers were conveniently determined by their etching rate in KOH or H3PO4, a method reported earlier. We suggest that the Al adatoms, which have a high sticking coefficient on SiC, form several Al adlayers on C-SiC and change the incorporation sequence of Ga(Al) and N leading to metal polarity surface. In addition, the hexagonal pyramids, typical on N-polarity GaN surface, are absent on N-polarity GaN on off-axis C-SiC owing to high density of terraces on off-axis C-SiC. The properties of GaN layers grown on C-SiC are studied by X-ray diffraction.

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