Determination of the trap energy levels and the emitter area dependence of noise in polyemitter bipolar junction transistors from generation–recombination noise spectra

1992 ◽  
Vol 70 (10-11) ◽  
pp. 949-958 ◽  
Author(s):  
A. Ng ◽  
M. J. Deem ◽  
John Ilowski
Keyword(s):  
Energy Levels ◽  
Absolute Temperature ◽  
Least Square ◽  
Noise Model ◽  
Current Noise ◽  
Noise Power ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Trap Energy ◽  
Base Current

A noise model for bipolar junction transistors based on generation–recombination (GR) noise originating from the traps located in the space-charge region of the emitter–base junction is derived. The model indicates that the current noise power owing to traps located inside the base–emitter depletion region should be proportional to the square of the collector current and inversely proportional to the emitter area. In addition, the model shows how the activation energy of a trap and the quasi-Fermi level can be related to the rising and falling edges of a GR noise spectrum by plotting the noise power against the reciprocal absolute temperature. Predictions from the noise model were compared with experimental data using seven bipolar transistors with emitter areas varying from 1.6 to 144 μm2. The noise measurements were performed at 10 temperatures between 10 and 100 °C and at different biasing currents. From the measurements, the base current noise power spectra [Formula: see text] is found to be proportional to the square of the base current (ib) and inversely proportional to the square of the emitter area. By plotting the noise power against the reciprocal temperature on a log–log graph and performing a linear least square fit on part of the data, a trap energy level of 821 meV above the valence band was determined.

HYDRODYNAMIC MODELING OF RF NOISE FOR SILICON-BASED DEVICES

2003 ◽  
Vol 13 (03) ◽  
pp. 823-848
Author(s):  
CHRISTOPH JUNGEMANN ◽  
BURKHARD NEINHÜS ◽  
BERND MEINERZHAGEN
Keyword(s):  
Monte Carlo ◽  
Hydrodynamic Model ◽  
Noise Model ◽  
Current Noise ◽  
Strong Impact ◽  
Collector Current ◽  
Sige Hbt ◽  
Silicon Based ◽  
Rf Noise ◽  
Analytical Expressions

A 2D hydrodynamic model based on modified Langevin forces for terminal current noise in the RF range is presented for Si and SiGe devices, where all transport and noise parameters are generated by full-band Monte Carlo simulations under bulk conditions and stored in lookup tables. Since these tables have to be built only once, the accuracy of the noise model is improved without increasing the CPU time compared to models based on analytical expressions for the parameters. The accuracy of the noise model is assessed by comparison with the Monte Carlo device model and good agreement of both models is found for diffusion and generation noise. The terminal current noise of a realistic SiGe HBT is investigated and it is found that hole diffusion noise has a strong impact on the collector current noise. The limitations of the thermodynamic model, a compact model for noise, are explored by comparison with the hydrodynamic model.

Low frequency (1/f ) noise model for the base current in polysilicon emitter bipolar junction transistors

1996 ◽  
Vol 79 (6) ◽  
pp. 3330-3336 ◽  
Author(s):  
A. Mounib ◽  
G. Ghibaudo ◽  
F. Balestra ◽  
D. Pogany ◽  
A. Chantre ◽  
...  
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Bipolar Junction Transistors ◽  
Base Current ◽  
Polysilicon Emitter

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 1025-1028 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Drop ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Forward Voltage ◽  
Collector Voltage ◽  
Forward Voltage Drop ◽  
Chip Size ◽  
Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

Methods for Evaluating the Influence of Non-Sinusidal Voltage on Capacitor Units in Power Supply Systems

2021 ◽  
Vol 64 (2) ◽  
pp. 86-92
Author(s):  
Eduard Kourennyi ◽  
◽  
Alexander Bulgakov ◽  
Arkady Kolomytsev ◽  
◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Power Supply ◽  
Voltage Pulse ◽  
Impulse Noise ◽  
Noise Model ◽  
Current Noise ◽  
Practical Calculation ◽  
Sinusoidal Voltage ◽  
Useful Signal ◽  
Supply Systems

The problems of evaluating the EMC for capacitor units (CU) in power supply systems are considered. The admissible value of the current non-sinusoidal component for the CU was found, it corresponds to the actual standards. The dynamic model of the «supply line – CU» circuit has been substantiated. An equivalent circuit is given. A non-sinusoidal signal is considered as the sum of a sinusoidal and non-sinusoidal component. As a non-sinusoidal component, a voltage pulse noise model with oppositely polar periodic rectangular pulses and pauses was used. Two approaches to determine the useful signal are considered. A physically substantiated interpretation of the concept of non-sinusoidal voltage is proposed for impulse noise. Expressions are given to determine the current noise of the CU. An example of the practical calculation of voltage and current distortion is given. The graphs of the voltage impulse noise and the resulting current noise are shown. An algorithm has been developed to evaluate the effectiveness of means for reducing impulse noise.

scholarly journals LSSVR Model of G-L Mixed Noise-Characteristic with Its Applications

Entropy ◽  
2020 ◽  
Vol 22 (6) ◽  
pp. 629 ◽  
Author(s):  
Shiguang Zhang ◽  
Ting Zhou ◽  
Lin Sun ◽  
Wei Wang ◽  
Baofang Chang
Keyword(s):  
Wind Speed ◽  
Regression Models ◽  
Historical Data ◽  
Least Square ◽  
Noise Model ◽  
Noise Distribution ◽  
Short Term ◽  
Mixed Noise ◽  
Noise Models ◽  
Better Than

Due to the complexity of wind speed, it has been reported that mixed-noise models, constituted by multiple noise distributions, perform better than single-noise models. However, most existing regression models suppose that the noise distribution is single. Therefore, we study the Least square S V R of the Gaussian–Laplacian mixed homoscedastic ( G L M − L S S V R ) and heteroscedastic noise ( G L M H − L S S V R ) for complicated or unknown noise distributions. The ALM technique is used to solve model G L M − L S S V R . G L M − L S S V R is used to predict short-term wind speed with historical data. The prediction results indicate that the presented model is superior to the single-noise model, and has fine performance.

Improved UFIR Tracking Algorithm for Maneuvering Target

2016 ◽  
Vol 2 (2) ◽  
pp. 344 ◽  
Author(s):  
Shoulin Yin ◽  
Jinfeng Wang ◽  
Tianhua Liu
Keyword(s):  
Target Tracking ◽  
Finite Impulse Response ◽  
Estimation Error ◽  
Statistical Properties ◽  
Noise Model ◽  
Noise Power ◽  
Actual Process ◽  
Maneuvering Target Tracking ◽  
Process Noise ◽  
Maneuvering Target

Maneuvering target tracking is a target motion estimation problem, which can describe the irregular target maneuvering motion. It has been widely used in the field of military and civilian applications. In the maneuvering target tracking, the performance of Kalman filter(KF) and its improved algorithms depend on the accuracy of process noise statistical properties. If there exists deviation between process noise model and the actual process, it will generate the phenomenon of estimation error increasing. Unbiased finite impulse response(UFIR) filter does not need priori knowledge of noise statistical properties in the filtering process. The existing UFIR filters have the problem that generalized noise power gain(GNPG) does not change with measurement of innovation. We propose an improved UFIR filter based on measurement of innovation with ratio dynamic adaptive adjustment at adjacent time. It perfects the maneuvering detect-ability. The simulation results show that the improved UFIR filter has the best filtering effect than KF when process noise is not accurate.

Parameter Estimation of the Mechanical Behavior of the Artery Using a Nonlinear Least Square Method With a Noise Model

2008 ◽  
Author(s):  
Shahrokh Zeinali ◽  
Jongeun Choi ◽  
Seungik Baek
Keyword(s):  
Parameter Estimation ◽  
Blood Vessel ◽  
Mechanical Behavior ◽  
Constitutive Relation ◽  
Environmental Changes ◽  
Constitutive Relations ◽  
Estimation Method ◽  
Least Square ◽  
Noise Model ◽  
Bias Error

Although it is well known that blood vessels adapt and remodel in response to various biomechanical stimuli, quantifying changes in constitutive relation corresponding to environmental changes is still challenging. Especially, when the dimension of blood vessel is small, the uncertainties in experimental measurements become significant and make it difficult to precisely estimate parameters of constitutive relations for mechanical behavior of the blood vessel. Hence without considering measurement error in displacement, a conventional nonlinear least square (NLS) method results in a biased parameter estimation. In this paper, we propose a new parameter estimation method to eliminate such bias error and provide more accurate estimated parameters for a constitutive relation using a weighted nonlinear least square (WNLS) method with a noise model. We first applied the proposed technique to a set of synthesized data with computer generated white noises and compared the fitting results to those of the NLS method without the noise model. We also applied our method to experimental data sets from mechanical tests of rabbit basilar and mouse carotid arteries and studied parameter sensitivity of the constitutive model.

1/fγ DRAIN CURRENT NOISE MODEL IN ULTRATHIN OXIDE MOSFETS

2004 ◽  
Vol 04 (02) ◽  
pp. L297-L307 ◽  
Author(s):  
JONGHWAN LEE ◽  
GIJS BOSMAN
Keyword(s):  
Drain Current ◽  
Trapping Efficiency ◽  
Doping Profile ◽  
Noise Model ◽  
Current Noise ◽  
Device Structure ◽  
Processing Technologies ◽  
New Device ◽  
Noise Characteristics ◽  
Ultrathin Oxide

A 1/fγ drain current noise model for deep-submicron MOSFETs with ultrathin oxide is presented. Based on the number and correlated mobility fluctuation mechanisms, the model is derived incorporating a tunneling assisted-thermally activated process and a more realistic trap distribution inside the gate oxide layer. The effects of the device structure and processing technologies on the noise characteristics are taken into consideration through a quadratic mobility degradation factor, a parasitic resistance, a doping profile, and trap-related parameters. For ultrathin oxide MOSFETs, the trapping efficiency ratio and the scattering rate are expressed in terms of the trap distance and the inversion carrier density, enabling an accurate prediction of the noise behavior. From quantitative results simulated with extracted data, it is shown that the new model is applicable to design future CMOS devices and new device processing technologies, and is suitable to be implemented in circuit simulators.

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