Low frequency (1/f ) noise model for the base current in polysilicon emitter bipolar junction transistors

1996 ◽  
Vol 79 (6) ◽  
pp. 3330-3336 ◽  
Author(s):  
A. Mounib ◽  
G. Ghibaudo ◽  
F. Balestra ◽  
D. Pogany ◽  
A. Chantre ◽  
...  
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Bipolar Junction Transistors ◽  
Base Current ◽  
Polysilicon Emitter

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

1997 ◽  
Vol 82 (5) ◽  
pp. 2671-2675 ◽  
Author(s):  
P. Llinares ◽  
D. Celi ◽  
O. Roux-dit-Buisson ◽  
G. Ghibaudo ◽  
J. A. Chroboczek
Keyword(s):  
Bipolar Junction Transistors ◽  
Base Current ◽  
Polysilicon Emitter

DC extraction of the base and emitter resistances in polysilicon-emitter npn BJTs

1996 ◽  
Vol 74 (S1) ◽  
pp. 172-176 ◽  
Author(s):  
V. Van ◽  
M. J. Deen ◽  
J. Kendall ◽  
D. S. Malhi ◽  
S. Voinigescu ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Junction Transistors ◽  
New Techniques ◽  
Current Range ◽  
Base Current ◽  
Ionization Yield ◽  
Ionization Method ◽  
Ionization Region ◽  
Polysilicon Emitter ◽  
The Impact

Five DC techniques of extracting the base and emitter resistances of polysilicon-emitter npn bipolar junction transistors (BJTs) are presented and compared. The five techniques include three previously published techniques and two new techniques, constant base current and IB–IE plane fitting. Application of the five methods to a 0.8 × 16 μm2 npn BJT shows that all but the method of impact ionization yield comparable Rc and Rbb values at high currents. The impact ionization method, which extracts Rc and Rbb in the impact ionization region and at low base currents, yields markedly different Rc and Rbb values, indicating that the values of the parasitic resistances depend on the current range over which the extraction is performed. Thus the choice of which method is best to use depends on the current range over which Rc and Rbb are to be measured, and the validity of the assumptions used in the method when applied to the device.

Determination of the trap energy levels and the emitter area dependence of noise in polyemitter bipolar junction transistors from generation–recombination noise spectra

1992 ◽  
Vol 70 (10-11) ◽  
pp. 949-958 ◽  
Author(s):  
A. Ng ◽  
M. J. Deem ◽  
John Ilowski
Keyword(s):  
Energy Levels ◽  
Absolute Temperature ◽  
Least Square ◽  
Noise Model ◽  
Current Noise ◽  
Noise Power ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Trap Energy ◽  
Base Current

A noise model for bipolar junction transistors based on generation–recombination (GR) noise originating from the traps located in the space-charge region of the emitter–base junction is derived. The model indicates that the current noise power owing to traps located inside the base–emitter depletion region should be proportional to the square of the collector current and inversely proportional to the emitter area. In addition, the model shows how the activation energy of a trap and the quasi-Fermi level can be related to the rising and falling edges of a GR noise spectrum by plotting the noise power against the reciprocal absolute temperature. Predictions from the noise model were compared with experimental data using seven bipolar transistors with emitter areas varying from 1.6 to 144 μm2. The noise measurements were performed at 10 temperatures between 10 and 100 °C and at different biasing currents. From the measurements, the base current noise power spectra [Formula: see text] is found to be proportional to the square of the base current (ib) and inversely proportional to the square of the emitter area. By plotting the noise power against the reciprocal temperature on a log–log graph and performing a linear least square fit on part of the data, a trap energy level of 821 meV above the valence band was determined.

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