Photoluminescence of heavily doped GaAs and Ga0.85In0.15As

1991 ◽  
Vol 69 (3-4) ◽  
pp. 339-345 ◽  
Author(s):  
R. Benzaquen ◽  
T. Erland ◽  
C. Lacelle ◽  
E. Fortin ◽  
A. P. Roth
Keyword(s):  
Impurity Band ◽  
Many Body ◽  
Interparticle Interactions ◽  
Impurity States ◽  
Potential Fluctuations ◽  
Heavily Doped ◽  
High Concentrations ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Acceptor Binding Energy

Zinc-doped, p-type, GaAs and Ga0.85In0.15As samples with a carrier concentration up to p = 1.95 × 1020 cm−3 were studied by low-temperature photoluminescence. At low doping levels, recombinations involving impurity states provide a measurement of the zinc-acceptor binding energy in the Ga0.85In0.15As alloy. At high concentrations, the discrete acceptor levels are replaced by an impurity band. In the presence of a high density of impurities, potential fluctuations and interparticle interactions result in a band-gap renormalization that is observed with photoluminescence experiments. This phenomenon is analyzed on the basis of available models that take into account the nonconservation of momentum for optical transitions as well as many-body effects.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Analysis of Defects in Heavily-Doped MBE-GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
C.B. Carter ◽  
D.M. Desimone ◽  
H.T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Liquid Phase ◽  
Molecular Beam ◽  
Type Material ◽  
Grown Layer ◽  
Defect Clusters ◽  
Complex Defect ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Very High

ABSTRACTGaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

scholarly journals Behavior of W and WSix Contact Metallization on n- and p- Type GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 684-690
Author(s):  
X. A. Cao ◽  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Ohmic Behavior ◽  
Contact Metallization ◽  
Specific Contact ◽  
Heavily Doped ◽  
Sputter Deposited ◽  
Optimum Annealing Temperature ◽  
P Type

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System

2008 ◽  
Vol 587-588 ◽  
pp. 283-287
Author(s):  
J. Díaz-Reyes ◽  
Miguel Galvan-Arellano ◽  
R. Peña-Sierra
Keyword(s):  
Hole Concentration ◽  
Radiative Transitions ◽  
Growth Atmosphere ◽  
Scattering Spectra ◽  
Van Der Pauw ◽  
High Concentrations ◽  
Raman Scattering Spectra ◽  
P Type ◽  
Photoluminescence Response

This work presents the optical and structural characterization of p-type GaAs epilayers. The gallium precursor was the organometallic compound trimethylgallium (TMG). The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements. The range of analyzed hole concentration was from 1017 to 1019 cm-3 as measured by the Hall-van der Pauw method. For carrying out doping p-type, it was necessary to modify the hydrogen activity in the growth atmosphere with the control of a H2+N2 mixture, which was used like transporting gas. The photoluminescence response and Raman dispersion of the layers are strongly dependence of the growth temperature, which were investigated based on the hole concentration. The PL response of the layers shows two radiative transitions, band-to-band and band-to-C-acceptor at low hole concentration and disappears at high concentrations. Raman scattering spectra show LO mode at 270 cm-1 for low doped samples and a LO-like mode at 290 cm-1 produced by the phonon-holeplasmon coupling for high doped samples.

Theory of Defects, Doping, Surfaces and Interfaces in Wide Gap Nitrides

1996 ◽  
Vol 423 ◽  
Author(s):  
J. Bernholc ◽  
P. Boguslawski ◽  
E. L. Briggs ◽  
M. Buongiorno Nardelli ◽  
B. Chen ◽  
...  
Keyword(s):  
Nearest Neighbor ◽  
Group Iv ◽  
Type I ◽  
Shallow Acceptor ◽  
Surface And Interface ◽  
Al Content ◽  
Surfaces And Interfaces ◽  
High Concentrations ◽  
P Type ◽  
High Al Content

AbstractThe results of extensive theoretical studies of group IV impurities and surface and interface properties of nitrides are presented and compared with available experimental data. Among the impurities, we have considered substitutional C, Si, and Ge. CN is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. At high concentrations, it is energetically favorable for group IV impurities to form nearest-neighbor Xcation-XN pairs. Turning to surfaces, AIN is known to exhibit NEA. We find that the NEA property depends sensitively on surface reconstruction and termination. At interfaces, the strain effects on the band offsets range from 20% to 40%, depending on the substrate. The AIN/GaN/InN interfaces are all of type I, while the A10.5Ga0.5 N/A1N zinc-blende (001) interface may be of type II. Further, the calculated bulk polarizations in wurtzite AIN and GaN are -1.2 and -0.45 μC/cm2, respectively, and the interface contribution to the polarization in the GaN/AlN wurtzite multi-quantum-well is small.

Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

2003 ◽  
Vol 34 (10) ◽  
pp. 969-974 ◽  
Author(s):  
L. Beji ◽  
L. Sfaxi ◽  
B. Ismail ◽  
S. Zghal ◽  
F. Hassen ◽  
...  
Keyword(s):  
Heavily Doped ◽  
Photoluminescence Studies ◽  
P Type

scholarly journals Macropore Formation and Pore Morphology Characterization of Heavily Doped p-Type Porous Silicon

2019 ◽  
Vol 166 (2) ◽  
pp. B9-B12 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Paula Martínez-Pérez ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Pore Morphology ◽  
Heavily Doped ◽  
P Type ◽  
Morphology Characterization ◽  
Macropore Formation
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