Sharp line donor–acceptor pair luminescence in silicon

1981 ◽  
Vol 59 (6) ◽  
pp. 784-801 ◽  
Author(s):  
U. O. Ziemelis ◽  
R. R. Parsons
Keyword(s):  
Broad Band ◽  
High Energy ◽  
Near Band Edge ◽  
Acceptor Pair ◽  
Sharp Line ◽  
Line Structure ◽  
Donor And Acceptor ◽  
Decay Times ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

New sharp line structure observed in the near-band-edge (1030 to 1135 meV) photoluminescence of Si(P, In) and Si(B, In) at temperatures ranging from 1.6 to 20 K, has been identified as due to radiative recombination of electrons bound to phosphorus donors with holes bound to indium acceptors. This is the first study of sharp line, donor–acceptor pair luminescence in silicon. Straightforward analysis, assuming only Coulomb and van der Waals interactions between otherwise isolated donor and acceptor centres indicates that recombination involving P and In centres separated by distances ranging from 7.7 to 20 Å is responsible for the observed sharp line structure. This structure is superimposed on the high energy shoulder of the broad band luminescence associated with recombination involving distant (average separation: 55 Å) P–In pairs. Transient measurements indicate decay times ranging from 70 to 100 μs for the most prominent sharp lines and an overall decay pattern consistent with that expected for donor–acceptor pair recombination.

Sharp-line, donor–acceptor pair recombination luminescence in Si(In,Li), Si(Ga,Li), Si(Al,Li), and Si(B,Li)

1982 ◽  
Vol 60 (7) ◽  
pp. 1041-1052 ◽  
Author(s):  
U. O. Ziemelis ◽  
M. L. W. Thewalt ◽  
R. R. Parsons
Keyword(s):  
Luminescence Line ◽  
Acceptor Pair ◽  
Sharp Line ◽  
Recombination Luminescence ◽  
Line Structure ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

The observation of sharp-line, donor–acceptor pair recombination luminescence in Si following the diffusion of the donor Li into samples previously doped with the acceptors B, Al, Ga, or In is reported. Shell assignments have been made for most of the numerous new photoluminescence lines. These assignments indicate that the principal donor introduced into the samples was the Li–O complex, and that the principal acceptor in the In-doped samples was the In–X centre. Results for the Al- and Ga-doped samples are consistent with ordinary Al and Ga acceptors, while those for B are inconclusive due to the extreme weakness of the sharp-line structure. This study not only confirms that donor–acceptor pair recombination in Si can give rise to sharp luminescence line series, but shows that this process is quite widespread, given the proper concentrations of donors and acceptors.

scholarly journals Cyan-emitting and orange-emitting fluorescent proteins as a donor/acceptor pair for fluorescence resonance energy transfer

2004 ◽  
Vol 381 (1) ◽  
pp. 307-312 ◽  
Author(s):  
Satoshi KARASAWA ◽  
Toshio ARAKI ◽  
Takeharu NAGAI ◽  
Hideaki MIZUNO ◽  
Atsushi MIYAWAKI
Keyword(s):  
Energy Transfer ◽  
Fluorescence Resonance Energy Transfer ◽  
Fluorescent Proteins ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Acceptor Pair ◽  
Donor And Acceptor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Fluorescence Resonance

GFP (green fluorescent protein)-based FRET (fluorescence resonance energy transfer) technology has facilitated the exploration of the spatio-temporal patterns of cellular signalling. While most studies have used cyan- and yellow-emitting FPs (fluorescent proteins) as FRET donors and acceptors respectively, this pair of proteins suffers from problems of pH-sensitivity and bleeding between channels. In the present paper, we demonstrate the use of an alternative additional donor/acceptor pair. We have cloned two genes encoding FPs from stony corals. We isolated a cyan-emitting FP from Acropara sp., whose tentacles exhibit cyan coloration. Similar to GFP from Renilla reniformis, the cyan FP forms a tight dimeric complex. We also discovered an orange-emitting FP from Fungia concinna. As the orange FP exists in a complex oligomeric structure, we converted this protein into a monomeric form through the introduction of three amino acid substitutions, recently reported to be effective for converting DsRed into a monomer (Clontech). We used the cyan FP and monomeric orange FP as a donor/acceptor pair to monitor the activity of caspase 3 during apoptosis. Due to the close spectral overlap of the donor emission and acceptor absorption (a large Förster distance), substantial pH-resistance of the donor fluorescence quantum yield and the acceptor absorbance, as well as good separation of the donor and acceptor signals, the new pair can be used for more effective quantitative FRET imaging.

Sharp-Line Donor-Acceptor Pair Spectra in AlSb

1968 ◽  
Vol 168 (3) ◽  
pp. 902-904 ◽  
Author(s):  
M. R. Lorenz ◽  
T. N. Morgan ◽  
G. D. Pettit ◽  
W. J. Turner
Keyword(s):  
Acceptor Pair ◽  
Sharp Line ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy

1995 ◽  
Vol 378 ◽  
Author(s):  
Sathya Balasubramanian ◽  
Vikram Kumar
Keyword(s):  
Photoluminescence Spectroscopy ◽  
Band Edge ◽  
Near Band Edge ◽  
Hydrogen Passivation ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe effect of hydrogenation on the photoluminescence (PL) of InP : Mg, InP : Zn and undoped n-InP is presented. An increase in the near band edge pl intensity due to passivation of non-radiative centers was observed in all the samples. A donor - acceptor pair transition was observed before hydrogenation in the InP : Mg sample and after hydrogenation in the InP : Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation.

Structural and Optical Characterization of CuxGaySe2Thin Films under Excitation with Above and Below Band Gap Laser Light

2002 ◽  
Vol 730 ◽  
Author(s):  
C. Xue ◽  
D. Papadimitriou ◽  
Y.S. Raptis ◽  
T. Riedle ◽  
N. Esser ◽  
...  
Keyword(s):  
Band Gap ◽  
Raman Spectra ◽  
Laser Light ◽  
Film Surface ◽  
Shallow Donor ◽  
Acceptor Pair ◽  
Donor And Acceptor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

AbstractCuxGaySe2MOCVD and PVD grown films were structurally and optically characterized by Raman, Micro-Raman and photoluminescence spectroscopy. Defect related photoluminescence excitation with wavelengths varying across the material band gap reveals: a) in Cu-rich CuGaSe2films, three band edge splitting due to the spin-orbit interaction and the crystal field, and donor-acceptor pair recombination between a shallow donor and two different acceptor levels, and b) in Ga-rich CuGaSe2films, donor-acceptor pair transitions between quasi-continua of donor and acceptor levels related to potential fluctuations. Raman spectra of CuxGaySe2films, excited by laser light near and below the material band gap, show intense modes at 197cm-1, 187cm-1, and 277cm-1, which can be used as indicators of crystallinity and Ga-content of the films. Polarization- and angular- dependent micro-Raman spectra of MOCVD CuGaSe2indicate that CuxSey-crystallites, dispersed on the surface of Cu-rich films, are grown oriented with their c-axis perpendicular to the film surface.

A donor-acceptor pair broad band emission in AgGaS2

1983 ◽  
Vol 28 (1) ◽  
pp. 65-72 ◽  
Author(s):  
J.P. Leyris ◽  
J.P. Aicardi ◽  
S. Soule
Keyword(s):  
Broad Band ◽  
Acceptor Pair ◽  
Broad Band Emission ◽  
Band Emission ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

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