Sharp-Line Donor-Acceptor Pair Spectra in AlSb

1968 ◽  
Vol 168 (3) ◽  
pp. 902-904 ◽  
Author(s):  
M. R. Lorenz ◽  
T. N. Morgan ◽  
G. D. Pettit ◽  
W. J. Turner
Keyword(s):  
Acceptor Pair ◽  
Sharp Line ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Sharp line donor–acceptor pair luminescence in silicon

1981 ◽  
Vol 59 (6) ◽  
pp. 784-801 ◽  
Author(s):  
U. O. Ziemelis ◽  
R. R. Parsons
Keyword(s):  
Broad Band ◽  
High Energy ◽  
Near Band Edge ◽  
Acceptor Pair ◽  
Sharp Line ◽  
Line Structure ◽  
Donor And Acceptor ◽  
Decay Times ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

New sharp line structure observed in the near-band-edge (1030 to 1135 meV) photoluminescence of Si(P, In) and Si(B, In) at temperatures ranging from 1.6 to 20 K, has been identified as due to radiative recombination of electrons bound to phosphorus donors with holes bound to indium acceptors. This is the first study of sharp line, donor–acceptor pair luminescence in silicon. Straightforward analysis, assuming only Coulomb and van der Waals interactions between otherwise isolated donor and acceptor centres indicates that recombination involving P and In centres separated by distances ranging from 7.7 to 20 Å is responsible for the observed sharp line structure. This structure is superimposed on the high energy shoulder of the broad band luminescence associated with recombination involving distant (average separation: 55 Å) P–In pairs. Transient measurements indicate decay times ranging from 70 to 100 μs for the most prominent sharp lines and an overall decay pattern consistent with that expected for donor–acceptor pair recombination.

Sharp-line, donor–acceptor pair recombination luminescence in Si(In,Li), Si(Ga,Li), Si(Al,Li), and Si(B,Li)

1982 ◽  
Vol 60 (7) ◽  
pp. 1041-1052 ◽  
Author(s):  
U. O. Ziemelis ◽  
M. L. W. Thewalt ◽  
R. R. Parsons
Keyword(s):  
Luminescence Line ◽  
Acceptor Pair ◽  
Sharp Line ◽  
Recombination Luminescence ◽  
Line Structure ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

The observation of sharp-line, donor–acceptor pair recombination luminescence in Si following the diffusion of the donor Li into samples previously doped with the acceptors B, Al, Ga, or In is reported. Shell assignments have been made for most of the numerous new photoluminescence lines. These assignments indicate that the principal donor introduced into the samples was the Li–O complex, and that the principal acceptor in the In-doped samples was the In–X centre. Results for the Al- and Ga-doped samples are consistent with ordinary Al and Ga acceptors, while those for B are inconclusive due to the extreme weakness of the sharp-line structure. This study not only confirms that donor–acceptor pair recombination in Si can give rise to sharp luminescence line series, but shows that this process is quite widespread, given the proper concentrations of donors and acceptors.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Photoassociation due to electron transfer. Exciplex formation in non-polar solvent

1971 ◽  
Vol 24 (9) ◽  
pp. 1797 ◽  
Author(s):  
RJ McDonald ◽  
BK Selinger
Keyword(s):  
Polar Solvent ◽  
Excitation Energy Transfer ◽  
Acceptor Pair ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Exciplex Formation ◽  
Reversible Dissociation ◽  
Fluorescence Excitation Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Exciplexes may be formed by exciting either partner of a given electron donor-acceptor pair. As the formation of such exciplexes is reversible, dissociation may lead to excitation energy transfer. ��� The temperature dependence of fluorescence excitation spectra has proved to be a powerful tool for exploring these systems.

scholarly journals Non-radiative coupled donor-acceptor pair recombination in nanostructures based on nitrides and related phenomena

2018 ◽  
Vol 1124 ◽  
pp. 041023
Author(s):  
N A Talnishnikh ◽  
E I Shabunina ◽  
N M Shmidt ◽  
A E Chernyakov ◽  
D S Arteev ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair
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