Conduction band of InAs

1968 ◽  
Vol 46 (15) ◽  
pp. 1669-1675 ◽  
Author(s):  
Clarence C. Y. Kwan ◽  
John C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Valence Band ◽  
Conduction Band ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Impurity Content ◽  
Temperature Measurements ◽  
Energy Separation ◽  
Transverse Magnetoresistance

Measurements of transverse magnetoresistance and Hall effect have been made at 4.2 °K on various In2Se3-doped and In2Te3-doped InAs polycrystalline specimens with magnetic fields up to 3.2 Wb/m2. An analysis of the results gives values of electron concentrations n0 and n1 and mobilities μ0 and μ1 for both the (000) and [Formula: see text] conduction-band minima. From the values of n0 and n1, the energy separation of the (000) and [Formula: see text] minima E01 of pure InAs has been determined to be 0.70 + 0.02 eV and is found to decrease with increasing impurity content, the rate of reduction being 0.13 ± 0.02 eV/at.% selenium and 0.17 ± 0.03 eV/at.% tellurium. Room-temperature measurements of electroreflectance and infrared absorption have also been made, and these indicate that the variation in E01 is due to the movement of the (000) conduction-band minimum relative to the valence band.

CONDUCTION BAND OF GaSb

1966 ◽  
Vol 44 (11) ◽  
pp. 2715-2728 ◽  
Author(s):  
H. B. Harland ◽  
J. C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Conduction Band ◽  
Electron Concentration ◽  
Electron Mobility ◽  
Impurity Level ◽  
Energy Separation ◽  
A Value

Measurements of transverse magnetoresistaiice and Hall effect have been made on various single-crystal n-type samples of GaSb at magnetic fields of up to 2.4 W/m2 and temperatures in the range 4.2–300 °K. An analysis of the results gives values and the temperature dependence for electron concentration n and electron mobility μ for both (000) and [Formula: see text] minima of the conduction band, the energy separation ΔE of (000) and [Formula: see text] minima, and a value for the effective mass m1* of electrons in the [Formula: see text] minima. Values of ΔE0 = 0.084 eV, d(ΔE)/dT = +0.8 × 10−4 eV/°C and m1* = 0.43 me are obtained, while the ratios of the electron mobilities μ0/μ1 lie in the range 5–21. The total number of observed electrons in the two bands, n0 + n1, is found to vary with temperature, and this result is interpreted in terms of an impurity level above the (000) minimum.

Nernst–Ettingshausen Effects in GaxIn1–xAs alloys

1973 ◽  
Vol 51 (22) ◽  
pp. 2369-2375 ◽  
Author(s):  
Denis J. E. Demars ◽  
John C. Woolley
Keyword(s):  
Experimental Data ◽  
Magnetic Fields ◽  
Effective Mass ◽  
Room Temperature ◽  
Optical Scattering ◽  
Temperature Measurements ◽  
Scattering Coefficient ◽  
Alloy Sample ◽  
Alloy Scattering ◽  
Good Agreement

Room temperature measurements of longitudinal and transverse Nernst–Ettingshausen coefficients [Formula: see text] have been made on samples of GaxIn1–xAs alloys for a range of magnetic fields (B) up to 3.2 Wb/m2. Previous theoretical expressions for the values of these coefficients have been extended to the case of electrons in a single Kane band, and hence expressions for [Formula: see text] and [Formula: see text] obtained in terms of B, the bottom of the band effective mass m0*, and the scattering coefficient s. Fitting of these expressions to the experimental data thus has given values of m0* and s for each alloy sample. The values of m0* are found to be in good agreement with those obtained previously from plasma reflectance work, while the values of s indicate that over most of the alloy range polar optical scattering is predominant, but that in the range 0.4 < x < 0.7, alloy scattering may also have some contribution.

Magnetoresistance of intermediate concentration n-Ge at helium temperatures

1987 ◽  
Vol 65 (1) ◽  
pp. 88-89
Author(s):  
E. El-Rafey ◽  
S. A. El-Atawy
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Conduction Band ◽  
Doping Level ◽  
Intermediate Level ◽  
Transverse Magnetoresistance ◽  
Temperature Range ◽  
Lower Temperature ◽  
Intermediate Concentration ◽  
Partial Compensation

Transverse magnetoresistance (TMR) measurements have been carried out at 4.2 and 1.7 K for magnetic fields up to 25 kG. The sample used is Sb-doped Ge with an intermediate level of concentration, ~6 × 1016 cm−1. At this doping level, two conduction regimes compete in the temperature range below 4.2 K. The temperature at which one regime gives way to another is 2.6 K. The TMR at 1.7 K has been found to be greater than that at 4.2 K. Moreover, at both temperatures, TMR is larger than that predicted by TMR theory for conduction-band electrons. In our case, TMR is mainly caused by carrier reduction with partial compensation by mobility increase. It has also been found that a magnetic field of 5.6 kG has no effect on the activation energies that exist at temperatures higher than 2.6 K, while it increases the lower temperature ones.

HIGH-TEMPERATURE HALL EFFECT IN GaSb

1966 ◽  
Vol 44 (11) ◽  
pp. 2709-2714 ◽  
Author(s):  
J. C. Woolley
Keyword(s):  
High Temperature ◽  
Hall Effect ◽  
Temperature Coefficient ◽  
Effective Mass ◽  
Conduction Band ◽  
Energy Separation ◽  
Zero Temperature

The anomalous high-temperature Hall data for GaSb are explained in terms of the effect of electrons in the [Formula: see text] conduction-band minima. By making reasonable assumptions about the mobility and effective mass of these electrons, values are determined for the zero-temperature energy separation of the [Formula: see text] and [Formula: see text] conduction-band minima and the temperature coefficient of the energy separation.

Conduction bands of GaxIn1−xAs and InAsxSb1−xalloys

1970 ◽  
Vol 48 (4) ◽  
pp. 463-469 ◽  
Author(s):  
William M. Coderre ◽  
John C. Woolley
Keyword(s):  
Electrical Conductivity ◽  
Band Structure ◽  
Valence Band ◽  
Conduction Band ◽  
High Temperatures ◽  
Hall Coefficient ◽  
Solidus Temperature ◽  
Energy Separation ◽  
Conduction Bands ◽  
Valence Bands

Measurements of Hall coefficient and electrical conductivity have been made on alloys of the systems GaxIn1−xAs and InAsxSb1−xover a range of temperature from 200 up to 950 °K or to 20° below the solidus temperature of the particular specimen, whichever was lower. These data have then been analyzed in terms of equations involving all the occupied conduction and valence bands in the manner described previously by Coderre and Woolley. The results give the variation of the energy separation from the valence band of the (000) conduction-band minimum as a function of the composition and temperature for both alloy systems. For a certain range of x in the InAsxSb1−x alloys, a transition to the gray-tin band structure is observed at high temperatures.

Electronic structure of the Peierls compound K0.9Mo6O17

2002 ◽  
Vol 12 (9) ◽  
pp. 95-96
Author(s):  
H. Guyot ◽  
H. Balaska ◽  
J. Marcus
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Fermi Level ◽  
Valence Band ◽  
Conduction Band ◽  
Room Temperature ◽  
Two Dimensional ◽  
Conduction Electrons ◽  
Peierls Transition ◽  
Good Agreement

The purple potassium bronze of molybdenum is a quasi two-dimensional compound showing a Peierls transition at 120 K. This transition is driven by the properties of the conduction electrons. In order to confirm the nature of the transition, we have investigated at room temperature the electronic structure of this oxide and established its band structure in the ΓK direction. A weak conduction band is detected, well separated from the valence band by a depleted region. The valence band shows several structures attributed to oxygen-type states and to the K3p shallow core level. The structures of the conduction band reveal the presence of at least two bands crossing the Fermi level, in relatively good agreement with the calculated band structure.

The Hall effect and electron energy spectrum near the conduction band edge of n-CdSb in magnetic fields up to 25 T

2006 ◽  
Vol 21 (7) ◽  
pp. 918-927 ◽  
Author(s):  
R Laiho ◽  
A V Lashkul ◽  
K G Lisunov ◽  
E Lähderanta ◽  
M O Safonchik ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Magnetic Fields ◽  
Hall Effect ◽  
Conduction Band ◽  
Electron Energy ◽  
Electron Energy Spectrum ◽  
Band Edge ◽  
Conduction Band Edge
Sign in / Sign up

Export Citation Format

Share Document