CONDUCTION BAND OF GaSb

1966 ◽  
Vol 44 (11) ◽  
pp. 2715-2728 ◽  
Author(s):  
H. B. Harland ◽  
J. C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Conduction Band ◽  
Electron Concentration ◽  
Electron Mobility ◽  
Impurity Level ◽  
Energy Separation ◽  
A Value

Measurements of transverse magnetoresistaiice and Hall effect have been made on various single-crystal n-type samples of GaSb at magnetic fields of up to 2.4 W/m2 and temperatures in the range 4.2–300 °K. An analysis of the results gives values and the temperature dependence for electron concentration n and electron mobility μ for both (000) and [Formula: see text] minima of the conduction band, the energy separation ΔE of (000) and [Formula: see text] minima, and a value for the effective mass m1* of electrons in the [Formula: see text] minima. Values of ΔE0 = 0.084 eV, d(ΔE)/dT = +0.8 × 10−4 eV/°C and m1* = 0.43 me are obtained, while the ratios of the electron mobilities μ0/μ1 lie in the range 5–21. The total number of observed electrons in the two bands, n0 + n1, is found to vary with temperature, and this result is interpreted in terms of an impurity level above the (000) minimum.

Conduction band of InAs

1968 ◽  
Vol 46 (15) ◽  
pp. 1669-1675 ◽  
Author(s):  
Clarence C. Y. Kwan ◽  
John C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Valence Band ◽  
Conduction Band ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Impurity Content ◽  
Temperature Measurements ◽  
Energy Separation ◽  
Transverse Magnetoresistance

Measurements of transverse magnetoresistance and Hall effect have been made at 4.2 °K on various In2Se3-doped and In2Te3-doped InAs polycrystalline specimens with magnetic fields up to 3.2 Wb/m2. An analysis of the results gives values of electron concentrations n0 and n1 and mobilities μ0 and μ1 for both the (000) and [Formula: see text] conduction-band minima. From the values of n0 and n1, the energy separation of the (000) and [Formula: see text] minima E01 of pure InAs has been determined to be 0.70 + 0.02 eV and is found to decrease with increasing impurity content, the rate of reduction being 0.13 ± 0.02 eV/at.% selenium and 0.17 ± 0.03 eV/at.% tellurium. Room-temperature measurements of electroreflectance and infrared absorption have also been made, and these indicate that the variation in E01 is due to the movement of the (000) conduction-band minimum relative to the valence band.

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

HIGH-TEMPERATURE HALL EFFECT IN GaSb

1966 ◽  
Vol 44 (11) ◽  
pp. 2709-2714 ◽  
Author(s):  
J. C. Woolley
Keyword(s):  
High Temperature ◽  
Hall Effect ◽  
Temperature Coefficient ◽  
Effective Mass ◽  
Conduction Band ◽  
Energy Separation ◽  
Zero Temperature

The anomalous high-temperature Hall data for GaSb are explained in terms of the effect of electrons in the [Formula: see text] conduction-band minima. By making reasonable assumptions about the mobility and effective mass of these electrons, values are determined for the zero-temperature energy separation of the [Formula: see text] and [Formula: see text] conduction-band minima and the temperature coefficient of the energy separation.

Luminescence of the Red Modification of Single-Crystal Pt(bpy)Cl2 (bpy: 2,2′-Bipyridine)

1990 ◽  
Vol 45 (5) ◽  
pp. 652-657 ◽  
Author(s):  
M. Weiser-Wallfahrer ◽  
G. Gliemann
Keyword(s):  
Magnetic Fields ◽  
Optical Absorption ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Energy Intensity ◽  
Optical Emission ◽  
Band Structures ◽  
Electronic Band ◽  
Emission Energy ◽  
Electronic Band Structures

The polarized optical emission (energy, intensity, lifetime) of the red modification of singlecrystal Pt(bpy)Cl2 as a function of temperature (1.9 ≤ T ≤ 298 K) and homogeneous magnetic fields (0 ≤ H ≤ 6 T), and the temperature dependence of the polarized optical absorption are reported. Analysis of the spectra indicates a strong inter-complex coupling giving rise to electronic band structures and self-trapped states.

Localization of Conduction Band Electrons in Polycrystalline Ti02 Studied by ESR

1981 ◽  
Vol 36 (3) ◽  
pp. 226-232 ◽  
Author(s):  
E. Serwicka ◽  
M. W. Schlierkamp ◽  
R. N. Schindler
Keyword(s):  
Activation Energy ◽  
Electron Transfer ◽  
Temperature Dependence ◽  
Conduction Band ◽  
Electron Acceptor ◽  
Electron Mobility ◽  
Signal Intensity ◽  
Esr Spectra ◽  
Electron Acceptors ◽  
Kcal Mole

Adsorption of electron acceptors on partially reduced TiO2 leads to the localization of mobile conduction band electrons which is indicated by the appearance of an ESR signal with g = 2.003. The localization process is accompanied by an electron transfer from donor centers in reduced TiO2 (Ti3+ ions) to adsorbed molecules. The ESR spectra show a decrease of the Ti3+ signal intensity at gr -1.96. Additionally, in the case of O2, SO2 and C6H5NO2 adsorption, the ESR signals of the respective anion radicals are observed. Illumination of samples with an electron acceptor adsorbed enhances the g - 2.003 signal. The activation energy corresponding to the temperature dependence of the localization process has been determined to be ~ 1 kcal/mole in the temperature range - 140 to - 40 °C. In the case of O2 and N2O the signal at g = 2.003 could be annihilated chemically by using propylene which reacted with the adsorbed electron acceptor and thus removed the species which reduced the electron mobility

OBSERVATION OF THE EXPONENTIAL TEMPERATURE DEPENDENCE OF THE TUNGSTEN SINGLE CRYSTAL MAGNETORESISTIVITY (PEIERLS' EXPONENT)

1993 ◽  
Vol 07 (01n03) ◽  
pp. 239-243
Author(s):  
V. V. MARCHENKOV ◽  
A. N. CHEREPANOV ◽  
V. E. STARTSEV
Keyword(s):  
Magnetic Fields ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Power Function ◽  
Temperature Interval ◽  
Tungsten Single Crystal ◽  
Exponential Temperature Dependence ◽  
Transverse Magnetoresistivity ◽  
Corbino Disk

The transverse magnetoresistivity of ultrapure tungsten single crystals in Corbino disk form was measured in the temperature interval 4.2–50 K in magnetic fields up to 14 T. The exponential temperature dependence of the electroconductivity, predicted by Peierls and caused by the intersheet electron-phonon Umklapp processes, is discovered in the magnetoconductivity. When the intersheet Umklapp processes are "frozen-out" the temperature dependence of the magnetoconductivity is a power function.

Conduction Band Parameters in GaSb from High-Temperature Transport Measurements

1972 ◽  
Vol 50 (11) ◽  
pp. 1068-1077 ◽  
Author(s):  
Joseph Basinski ◽  
Clarence C. Y. Kwan ◽  
John C. Woolley
Keyword(s):  
Magnetic Field ◽  
High Temperature ◽  
Conduction Band ◽  
Hall Coefficient ◽  
Electron Mobility ◽  
Band Model ◽  
Zero Field ◽  
A Value ◽  
Semiempirical Relation ◽  
Band Separation

Measurements of resistivity and Hall coefficient as a function of magnetic field (0–3.2 Wb/m2) and temperature (25–200 C) have been made on samples of Te-doped GaSb. The results have been analyzed in terms of a two-conduction-band model with minima at Γ1 and L1, using the method reported by Kwan et al. This analysis yields a value for the Γ1–L1 band separation of 0.097 ± 0.002 eV, when linearly extrapolated to 0 K, and a temperature coefficient of −3.4 × 10−5 eV/K. The measurements of the Hall coefficient at 0.87 Wb/m2 and the zero-field resistivity have been extended to 360 C. These data have been analyzed using a four-band model (Γ1, L1X1, and Γ15 V), thus giving the temperature dependence of electron mobility in the Γ1 and L1 bands. The electron mobility values for the L1 band have then been fitted to a semiempirical relation, obtained by assuming appropriate scattering mechanisms.

The Hall effect and electron energy spectrum near the conduction band edge of n-CdSb in magnetic fields up to 25 T

2006 ◽  
Vol 21 (7) ◽  
pp. 918-927 ◽  
Author(s):  
R Laiho ◽  
A V Lashkul ◽  
K G Lisunov ◽  
E Lähderanta ◽  
M O Safonchik ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Magnetic Fields ◽  
Hall Effect ◽  
Conduction Band ◽  
Electron Energy ◽  
Electron Energy Spectrum ◽  
Band Edge ◽  
Conduction Band Edge
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