HIGH-TEMPERATURE HALL EFFECT IN GaSb

1966 ◽  
Vol 44 (11) ◽  
pp. 2709-2714 ◽  
Author(s):  
J. C. Woolley
Keyword(s):  
High Temperature ◽  
Hall Effect ◽  
Temperature Coefficient ◽  
Effective Mass ◽  
Conduction Band ◽  
Energy Separation ◽  
Zero Temperature

The anomalous high-temperature Hall data for GaSb are explained in terms of the effect of electrons in the [Formula: see text] conduction-band minima. By making reasonable assumptions about the mobility and effective mass of these electrons, values are determined for the zero-temperature energy separation of the [Formula: see text] and [Formula: see text] conduction-band minima and the temperature coefficient of the energy separation.

Conduction band of InAs

1968 ◽  
Vol 46 (15) ◽  
pp. 1669-1675 ◽  
Author(s):  
Clarence C. Y. Kwan ◽  
John C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Valence Band ◽  
Conduction Band ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Impurity Content ◽  
Temperature Measurements ◽  
Energy Separation ◽  
Transverse Magnetoresistance

Measurements of transverse magnetoresistance and Hall effect have been made at 4.2 °K on various In2Se3-doped and In2Te3-doped InAs polycrystalline specimens with magnetic fields up to 3.2 Wb/m2. An analysis of the results gives values of electron concentrations n0 and n1 and mobilities μ0 and μ1 for both the (000) and [Formula: see text] conduction-band minima. From the values of n0 and n1, the energy separation of the (000) and [Formula: see text] minima E01 of pure InAs has been determined to be 0.70 + 0.02 eV and is found to decrease with increasing impurity content, the rate of reduction being 0.13 ± 0.02 eV/at.% selenium and 0.17 ± 0.03 eV/at.% tellurium. Room-temperature measurements of electroreflectance and infrared absorption have also been made, and these indicate that the variation in E01 is due to the movement of the (000) conduction-band minimum relative to the valence band.

CONDUCTION BAND OF GaSb

1966 ◽  
Vol 44 (11) ◽  
pp. 2715-2728 ◽  
Author(s):  
H. B. Harland ◽  
J. C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Conduction Band ◽  
Electron Concentration ◽  
Electron Mobility ◽  
Impurity Level ◽  
Energy Separation ◽  
A Value

Measurements of transverse magnetoresistaiice and Hall effect have been made on various single-crystal n-type samples of GaSb at magnetic fields of up to 2.4 W/m2 and temperatures in the range 4.2–300 °K. An analysis of the results gives values and the temperature dependence for electron concentration n and electron mobility μ for both (000) and [Formula: see text] minima of the conduction band, the energy separation ΔE of (000) and [Formula: see text] minima, and a value for the effective mass m1* of electrons in the [Formula: see text] minima. Values of ΔE0 = 0.084 eV, d(ΔE)/dT = +0.8 × 10−4 eV/°C and m1* = 0.43 me are obtained, while the ratios of the electron mobilities μ0/μ1 lie in the range 5–21. The total number of observed electrons in the two bands, n0 + n1, is found to vary with temperature, and this result is interpreted in terms of an impurity level above the (000) minimum.

A sensitivity analysis on the electron transport within zinc oxide and its device implications

MRS Advances ◽  
2016 ◽  
Vol 1 (40) ◽  
pp. 2777-2782 ◽  
Author(s):  
Poppy Siddiqua ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Velocity Field ◽  
Effective Mass ◽  
Conduction Band ◽  
Energy Separation ◽  
Material Parameters ◽  
Field Characteristic ◽  
Device Applications ◽  
Peak Field

ABSTRACTZinc oxide has recently been touted as a material that may prove useful for high-power and high-frequency electron device applications. Unfortunately, at the present moment at least, zinc oxide’s electron transport results are based upon material parameter selections that remain disputed, i.e., their exact values have yet to be satisfactorily resolved. In order to establish how the expected range of disputed material parameter values influence the corresponding electron transport results, this paper assesses the sensitivity of the electron transport results associated with zinc oxide to variations in these disputed material parameters. The disputed material parameters that we focus on for the purposes of this particular analysis include the non-parabolicity coefficient associated with the lowest energy conduction band valley, the conduction band inter-valley energy separation, and the effective mass associated with the electrons in the upper energy conduction band valleys. For the purposes of this analysis, steady-state electron transport results are the focus of this sensitivity analysis, the velocity-field characteristic associated with zinc oxide being the principal metric of concern. We find that increases in the non-parabolicity coefficient associated with the lowest energy conduction band valley lead to increases in the peak field of the velocity-field characteristic and initially an increase and then a decrease in the peak electron drift velocity of this material. Increases in the conduction band inter-valley energy separation are instead found to result in increases in the peak field and concomitant increases in the peak electron drift velocity. Finally, increases in the effective mass associated with the electrons in the upper energy conduction band valleys are found to lead to a sharpening of the slope of the velocity-field characteristic in the region beyond the peak field, greater effective mass leading to a greater magnitude slope. Based on the magnitude of these variations, we conclude that zinc oxide may indeed be considered as a material for high-power and high-frequency electron device applications even when the variations in these disputed material parameters have been accounted for.

scholarly journals Interlayer ferromagnetism and high-temperature quantum anomalous Hall effect in p -doped MnBi2Te4 multilayers

2021 ◽  
Vol 103 (24) ◽  
Author(s):  
Yulei Han ◽  
Shiyang Sun ◽  
Shifei Qi ◽  
Xiaohong Xu ◽  
Zhenhua Qiao
Keyword(s):  
High Temperature ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Quantum Anomalous Hall Effect
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