2010 Proceedings of the European Solid State Device Research Conference
Latest Publications

TOTAL DOCUMENTS

101

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Published By IEEE

9781424466580

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Impact of fast-recovering NBTI degradation on stability of large-scale SRAM arrays

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618438 ◽

2010 ◽

Cited By ~ 8

Author(s):

Stefan Drapatz ◽

Karl Hofmann ◽

Georg Georgakos ◽

Doris Schmitt-Landsiedel

Keyword(s):

Large Scale

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Drain-extended MOS transistors capable for operation at 10V and at radio frequencies

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5617714 ◽

2010 ◽

Cited By ~ 4

Author(s):

Andreas Mai ◽

Holger Rucker

Keyword(s):

Mos Transistors ◽

Radio Frequencies

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Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618197 ◽

2010 ◽

Cited By ~ 12

Author(s):

Wan Gee Kim ◽

Min Gyu Sung ◽

Sook Joo Kim ◽

Ja Yong Kim ◽

Ji Won Moon ◽

...

Keyword(s):

Transition Metal ◽

Metal Oxide ◽

Random Access ◽

Random Access Memory ◽

Transition Metal Oxide ◽

Access Memory ◽

Resistance Random Access Memory ◽

Switching Characteristics ◽

Type Of Transition

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The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618386 ◽

2010 ◽

Author(s):

Giovanni A. Salvatore ◽

Livio Lattanzio ◽

Didier Bouvet ◽

Adrian M. Ionescu

Keyword(s):

Curie Temperature ◽

Design Parameter ◽

Field Effect ◽

Field Effect Transistors

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Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618215 ◽

2010 ◽

Author(s):

Livio Lattanzio ◽

Luca De Michielis ◽

Arnab Biswas ◽

Adrian M. Ionescu

Keyword(s):

Barrier Tunneling

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Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618230 ◽

2010 ◽

Cited By ~ 8

Author(s):

G. Betti Beneventi ◽

L. Perniola ◽

A. Fantini ◽

D. Blachier ◽

A. Toffoli ◽

...

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Carbon Doped ◽

Current Reduction ◽

Change Memory

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CMOS-MEMS free-free beam resonators

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618173 ◽

2010 ◽

Author(s):

J.L. Lopez ◽

E. Marigo ◽

J. Giner ◽

J.L. Munoz-Gamarra ◽

F. Torres ◽

...

Keyword(s):

Cmos Mems ◽

Free Beam

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SET switching effects on PCM endurance

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618227 ◽

2010 ◽

Cited By ~ 2

Author(s):

Vincenzo Della Marca ◽

Francesca Carboni ◽

Luca Larcher ◽

Andrea Padovani ◽

Paolo Pavan

Keyword(s):

Set Switching

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Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618458 ◽

2010 ◽

Cited By ~ 5

Author(s):

P. Asenov ◽

N. A. Kamsani ◽

D. Reid ◽

C. Millar ◽

S. Roy ◽

...

Keyword(s):

Digital Circuit ◽

Yield Analysis ◽

Parametric Yield ◽

Statistical Variability

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A new model for the backscatter coefficient in nanoscale MOSFETs

2010 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2010.5618380 ◽

2010 ◽

Cited By ~ 3

Author(s):

J.-L.P.J. van der Steen ◽

P. Palestri ◽

D. Esseni ◽

R.J.E. Hueting

Keyword(s):

Backscatter Coefficient ◽

New Model ◽

Nanoscale Mosfets

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2010 Proceedings of the European Solid State Device Research ConferenceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Impact of fast-recovering NBTI degradation on stability of large-scale SRAM arrays

Drain-extended MOS transistors capable for operation at 10V and at radio frequencies

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

CMOS-MEMS free-free beam resonators

SET switching effects on PCM endurance

Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis

A new model for the backscatter coefficient in nanoscale MOSFETs

2010 Proceedings of the European Solid State Device Research Conference
Latest Publications