Measurements of transverse magnetoresistaiice and Hall effect have been made on various single-crystal n-type samples of GaSb at magnetic fields of up to 2.4 W/m2 and temperatures in the range 4.2–300 °K. An analysis of the results gives values and the temperature dependence for electron concentration n and electron mobility μ for both (000) and [Formula: see text] minima of the conduction band, the energy separation ΔE of (000) and [Formula: see text] minima, and a value for the effective mass m1* of electrons in the [Formula: see text] minima. Values of ΔE0 = 0.084 eV, d(ΔE)/dT = +0.8 × 10−4 eV/°C and m1* = 0.43 me are obtained, while the ratios of the electron mobilities μ0/μ1 lie in the range 5–21. The total number of observed electrons in the two bands, n0 + n1, is found to vary with temperature, and this result is interpreted in terms of an impurity level above the (000) minimum.
Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат