Ètude des interfaces SiO2/TiO2 et TiO2/SiO2 dans la structure SiO2/TiO2/SiO2/c-Si préparée par pulvérisation cathodique radio fréquence

2007 ◽  
Vol 85 (7) ◽  
pp. 763-776
Author(s):  
K Hafidi ◽  
M Azizan ◽  
Y Ijdiyaou ◽  
E L Ameziane
Keyword(s):  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
Interface State ◽  
Concentration Profiles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interfacial Layers ◽  
Surface And Interface ◽  
Crystalline Substrate ◽  
Complementary Techniques

The atomic structure of the TiO2/SiO2 and SiO2/TiO2 interfaces has been investigated in SiO2/TiO2/SiO2 multilayers deposited by radio frequency reactive sputtering without breaking the vacuum on the crystalline substrate cooled by water. The characterizations of these interfaces have been performed using three complementary techniques sensitive to surface and interface state: X-ray photoelectron spectroscopy (XPS), grazing incidence X-ray diffraction (GIXD), and specular X-ray reflectometry (GIXR). The concentration profiles and Si2p and O1s core level chemical displacements show that TiO2/SiO2 and SiO2/TiO2 interfaces are very diffuse. The reflectometry measurements confirm this character and indicate that the silicon, titanium, and oxygen atomic concentrations vary gradually at the interfaces. The grazing incidence X-ray spectra indicates that the interfacial layers are not well crystallized and are formed by SiO2-TiO2, TiO, Ti2O3, Ti3O5, Ti5Si3, Ti5Si4, TiSi, and TiSi2 components.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

EPITAXY OF ULTRATHIN CoO FILMS STUDIED BY XPD AND GIXRD

2002 ◽  
Vol 09 (02) ◽  
pp. 937-941 ◽  
Author(s):  
P. LUCHES ◽  
C. GIOVANARDI ◽  
T. MOIA ◽  
S. VALERI ◽  
F. BRUNO ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Lattice Constant ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Direction Parallel ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Rocksalt Structure ◽  
Plane Lattice

CoO layers have been grown by exposing to oxygen the (001) body-centered-tetragonal (bct) surface of a Co ultrathin film epitaxially grown on Fe(001). Different oxide thicknesses in the 2–15 ML range have been investigated by means of synchrotron-radiation-based techniques. X-ray photoelectron spectroscopy has been used to check the formation of the oxide films; X ray photoelectron diffraction has given information concerning the symmetry of their unit cell; grazing incidence X-ray diffraction has allowed to evaluate precisely their in-plane lattice constant. The films show a CoO(001) rocksalt structure, rotated by 45° with respect to the bct Co substrate, with the [100] direction parallel to the substrate [110] direction. Their in-plane lattice constant increases as a function of thickness, to release the in-plane strain due to the 3% mismatch between the bulk CoO phase and the underlying substrate.

scholarly journals Structure-Dependent Mechanical Properties of ALD-Grown Nanocrystalline BiFeO3Multiferroics

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Anna Majtyka ◽  
Anna Nowak ◽  
Benoît Marchand ◽  
Dariusz Chrobak ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Photoelectron Spectroscopy ◽  
Present Report ◽  
Structural Evolution ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition ◽  
Pertinent Information

The present paper pertains to mechanical properties and structure of nanocrystalline multiferroic BeFiO3(BFO) thin films, grown by atomic layer deposition (ALD) on the Si/SiO2/Pt substrate. The usage of sharp-tip-nanoindentation and multiple techniques of structure examination, namely, grazing incidence X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and energy dispersive X-ray spectrometry, enabled us to detect changes in elastic properties(95 GPa≤E≤118 GPa)and hardness(4.50 GPa≤H≤7.96 GPa)of BFO after stages of annealing and observe their relation to the material’s structural evolution. Our experiments point towards an increase in structural homogeneity of the samples annealed for a longer time. To our best knowledge, the present report constitutes the first disclosure of nanoindentation mechanical characteristics of ALD-fabricated BeFiO3, providing a new insight into the phenomena that accompany structure formation and development of nanocrystalline multiferroics. We believe that our systematic characterization of the BFO layers carried out at consecutive stages of their deposition provides pertinent information which is needed to control and optimize its ALD fabrication.

Energy Dispersive Grazing Incidence X-ray Diffraction Study on Organic Thin Films EpitaxiaHy Grown on Crystalline Substrate

1995 ◽  
Vol 39 ◽  
pp. 659-664 ◽  
Author(s):  
Kenji Ishida ◽  
Akinori Kita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Shoichi Kal ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Studies ◽  
Organic Thin Films ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural Evaluation ◽  
Crystalline Substrate ◽  
Scattering Volume

Thin film technology is rapidly evolving today, and the characterization of the thin film and its surface have become very important issue not only from scientific but also technological viewpoints. Although x-ray diffraction measurements have been used as suitable evaluation methods in crystallography studies, its application to the structural evaluation of the thin films, especially organic one having the low electron densities, is not easy due to the small amounts of scattering volume and the high obstructive scattering noise from the substrate. However, the x-ray diffraction measurements under grazing incidence will aid not only in overcoming the such problems but also in analyzing in-plane structure of the thin films. Therefore, so-called grazing incidence x-ray diffraction (GIXD) has been recognized as one of the most powerful tools for the surface and thin film studies.

Thermal Degradation of SiGe Interfaces Studied by X-Ray Reflectivity and Diffraction

1991 ◽  
Vol 239 ◽  
Author(s):  
J. M. Hudson ◽  
A. R. Powell ◽  
D. K. Bowen ◽  
M. Wormington ◽  
B. K. Tanner ◽  
...  
Keyword(s):  
Short Range ◽  
Grazing Incidence ◽  
Sige Layer ◽  
Interface Roughness ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Superlattice Structures

ABSTRACTWe demonstrate the use of x-ray diffraction to provide accurate compositional information, together with grazing incidence reflectivity to provide information on layer thicknesses and surface and interface roughnesses, on Si/Si1-xGex superlattice structures of less than 200nm total thickness.The quality of SiGe interfaces has been investigated in superlattices where x varies from 0.1 to 0.5. At low Ge compositions the interfaces are shown to be smooth to a few angstroms. However, as the Ge composition in the SiGe layer approaches 50%, severe roughness is observed at the SiGe to Si interfaces, although the Si to SiGe interfaces remain relatively smooth.Upon annealing for one hour at 850°C the Ge diffuses outwards from the SiGe layers and can be closely modelled by inclusion of a (2.4±0.3)nm linearly graded layer either side of the SiGe layer into a simulation program. The long range roughness at the SiGe to Si interface is lost upon annealing leaving only a short range roughness of similar size to the Si to SiGe interface roughness.Reflectivity measurements have been shown to distinguish between interface roughness and interdiffusion for the annealed system.

Generalized grazing-incidence-angle X-ray diffraction (G-GIXD) using image plates

1998 ◽  
Vol 5 (3) ◽  
pp. 488-490 ◽  
Author(s):  
Yasuo Takagi ◽  
Masao Kimura
Keyword(s):  
Incidence Angle ◽  
Incident Beam ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Out Of Plane ◽  
Grazing Incidence Angle ◽  
Interface Layers

A new and more `generalized' grazing-incidence-angle X-ray diffraction (G-GIXD) method which enables simultaneous measurements both of in- and out-of-plane diffraction images from surface and interface structures has been developed. While the method uses grazing-incidence-angle X-rays like synchrotron radiation as an incident beam in the same manner as in `traditional' GIXD, two-dimensional (area) detectors like image plates and a spherical-type goniometer are used as the data-collection system. In this way, diffraction images both in the Seemann–Bohlin (out-of-plane) and GIXD geometry (in-plane) can be measured simultaneously without scanning the detectors. The method can be applied not only to the analysis of the in-plane crystal structure of epitaxically grown thin films, but also to more general research topics like the structural analysis of polycrystalline mixed phases of thin surface and interface layers.

Study on polished and etched surfaces of polar (111) CdTe by x‐ray photoelectron spectroscopy and grazing‐incidence x‐ray diffraction

1992 ◽  
Vol 71 (10) ◽  
pp. 5212-5216 ◽  
Author(s):  
T. B. Wu ◽  
J. S. Chen ◽  
C. D. Chiang ◽  
Y. M. Pang ◽  
S. J. Yang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Diamond beamline I07: a beamline for surface and interface diffraction

2016 ◽  
Vol 23 (5) ◽  
pp. 1245-1253 ◽  
Author(s):  
Chris Nicklin ◽  
Tom Arnold ◽  
Jonathan Rawle ◽  
Adam Warne
Keyword(s):  
Photoelectron Spectroscopy ◽  
Accurate Determination ◽  
Ultrahigh Vacuum ◽  
Grazing Incidence ◽  
X Rays ◽  
Scanning Tunnelling Microscope ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Wide Range

Beamline I07 at Diamond Light Source is dedicated to the study of the structure of surfaces and interfaces for a wide range of sample types, from soft matter to ultrahigh vacuum. The beamline operates in the energy range 8–30 keV and has two endstations. The first houses a 2+3 diffractometer, which acts as a versatile platform for grazing-incidence techniques including surface X-ray diffraction, grazing-incidence small- (and wide-) angle X-ray scattering, X-ray reflectivity and grazing-incidence X-ray diffraction. A method for deflecting the X-rays (a double-crystal deflector) has been designed and incorporated into this endstation, extending the surfaces that can be studied to include structures formed on liquid surfaces or at liquid–liquid interfaces. The second experimental hutch contains a similar diffractometer with a large environmental chamber mounted on it, dedicated toin situultrahigh-vacuum studies. It houses a range of complementary surface science equipment including a scanning tunnelling microscope, low-energy electron diffraction and X-ray photoelectron spectroscopy ensuring that correlations between the different techniques can be performed on the same sample, in the same chamber. This endstation allows accurate determination of well ordered structures, measurement of growth behaviour during molecular beam epitaxy and has also been used to measure coherent X-ray diffraction from nanoparticles during alloying.

Microstructural Investigations of Hafnium Aluminum Oxide Films

2008 ◽  
Vol 1074 ◽  
Author(s):  
Doina Craciun ◽  
Gabriel Socol ◽  
Emanuel Axente ◽  
Aurelian-Catalin Galca ◽  
Rajiv Singh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Composition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Stability Of

ABSTRACTThe crystalline structure, composition, chemical bonding and thermal stability of HfO2-Al2O3 mixtures deposited on Si using a combinatorial pulsed laser deposition technique were investigated. After deposition some films were annealed at temperatures from 850 to 950 °C for 6 or 12 minutes. Grazing incidence x-ray diffraction investigations were performed to asses the crystallinity and thermal stability of the annealed layers. Measurements of the Al to Hf ratios were performed using energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. From simulations of the x-ray reflectivity and spectroscopic ellipsometry spectra the phase composition and thickness of the films was calculated and then the Al to Hf ratios. Al/Hf values of 1 and 8 were found to be necessary to block the crystallization of the films after anneals at 850 and 950 °C, respectively.

Sign in / Sign up

Export Citation Format

Share Document