The effects of bias polarity on diamond deposition by hot-filament chemical vapor deposition

2005 ◽  
Vol 83 (7) ◽  
pp. 753-759 ◽  
Author(s):  
W Chen ◽  
C Xiao ◽  
Q Yang ◽  
A Moewes ◽  
A Hirose
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Carbon Nanocones ◽  
81.15 Gh ◽  
Field Lines ◽  
Biasing Effects ◽  
Hot Filament

Electric voltages with both polarities were applied to silicon substrates in a hot-filament chemical vapour deposition device to study the biasing effects on deposition of diamond and carbon nanocones. It has been found that positive biasing greatly enhanced diamond nucleation density and improved diamond film quality. On the other hand, negative biasing promotes deposition of dense, well-aligned carbon nanocones. The orientation of the carbon nanocones appears to align with the direction of the electric field lines near the substrate surface.PACS Nos.: 81.15.Gh, 81.05.Uw, 81.07.–b

Selective Growth of Diamond Films On Mirror-Polished Silicon Substrates

1993 ◽  
Vol 334 ◽  
Author(s):  
M.Y. Mao ◽  
S.S. Tan ◽  
X.K. Zhang ◽  
W.Y. Wang
Keyword(s):  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Polycrystalline Diamond ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapour Deposition ◽  
Surface Particle

AbstractPolycrystalline diamond thin films have been selectively grown on mirror-polished silicon substrates using bias-enhanced microwave plasma chemical vapour deposition (MPCVD) to increase diamond nucleation density. A slight etching of Si02 mask was employed after the nucleation treatment to remove the diamond nuclei on the mask. Perfect diamond patterns with smooth surface (particle size <0.5µm) and sharp boundaries were obtained. The diamond film gears with 400µm in diameter and 5µm in thickness were first fabricated by this technique.

Structure and photoluminescence of boron-doped carbon nanoflakes grown by hot filament chemical vapour deposition

2015 ◽  
Vol 3 (5) ◽  
pp. 1106-1112 ◽  
Author(s):  
Biben Wang ◽  
Kostya (Ken) Ostrikov ◽  
Timothy van der Laan ◽  
Ruiwen Shao ◽  
Lin Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Carbide ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Carbon Nanoflakes ◽  
Boron Source ◽  
Hot Filament

Boron-doped carbon nanoflakes were directly synthesized by hot filament chemical vapor deposition, nontoxic boron carbide was used as the boron source.

Effects of Substrate Bias on the Nucleation of Diamond Films Studied by Atomic Force Microscopy

1995 ◽  
Vol 416 ◽  
Author(s):  
G. Sánchez ◽  
M. C. Polo ◽  
W. L. Wang ◽  
J. Esteve
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Substrate Bias ◽  
Applied Bias ◽  
Force Microscopy ◽  
Nucleation Stage ◽  
Atomic Force ◽  
Hot Filament

ABSTRACTThe nucleation stage of diamond on silicon substrates was studied by atomic force microscopy. Samples were grown by hot filament chemical vapor deposition and substrate biases from -200 ν to +75 ν were investigated. The effects of the process on the substrate as well as on the morphology of the crystallites were observed using an atomic force microscope operating in tapping mode. It was observed that both the density and morphology of the diamond crystallites were greatly dependent on the applied bias values. The highest nucleation density was achieved for the -200 ν bias, when a plasma around the substrate holder was formed.

Growth and photoluminescence of oriented MoSe2nanosheets produced by hot filament CVD

RSC Advances ◽  
2016 ◽  
Vol 6 (43) ◽  
pp. 37236-37245 ◽  
Author(s):  
B. B. Wang ◽  
K. Ostrikov ◽  
T. van der Laan ◽  
K. Zheng ◽  
R. Shao ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Silicon Substrates ◽  
Hot Filament Cvd ◽  
Hot Filament

Oriented MoSe2nanosheets with varying layers and structures were synthesized on silicon substrates by hot filament chemical vapour deposition in a nitrogen environment using MoO3and Se powders as precursors.

scholarly journals Self-organized graphene-like boron nitride containing nanoflakes on copper by low-temperature N2 + H2 plasma

RSC Advances ◽  
2016 ◽  
Vol 6 (90) ◽  
pp. 87607-87615 ◽  
Author(s):  
B. B. Wang ◽  
D. Gao ◽  
I. Levchenko ◽  
K. Ostrikov ◽  
M. Keidar ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Nitride ◽  
Chemical Vapour Deposition ◽  
Efficient Method ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Self Organized ◽  
Reactive Gases ◽  
Hot Filament

A simple and efficient method for synthesizing complex graphene-inspired BNCO nanoflakes by plasma-enhanced hot filament chemical vapour deposition using B4C as a precursor and N2/H2 reactive gases is reported.

Synthesis of Nano-Crystalline Diamond Film in Hot Filament Chemical Vapour Deposition by Adding Ar

2001 ◽  
Vol 18 (2) ◽  
pp. 286-288 ◽  
Author(s):  
Zhang Yu-Feng ◽  
Zhang Fan ◽  
Gao Qiao-Jun ◽  
Yu Da-Peng ◽  
Peng Xiao-Fu ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Diamond Film ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Nano Crystalline ◽  
Hot Filament

Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
Yan Chen ◽  
Jun Mei ◽  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Heteroepitaxial Growth ◽  
Hot Filament ◽  
Low Pressures ◽  
Gaseous Source

AbstractDiamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109–1011/cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.

Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition

1995 ◽  
Vol 10 (2) ◽  
pp. 425-430 ◽  
Author(s):  
W. Zhu ◽  
F.R. Sivazlian ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Wire Mesh ◽  
Reactor Wall ◽  
Nucleation Density ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament

This paper describes a process for uniformly enhancing the nucleation density of diamond films on silicon (Si) substrates via dc-biased hot filament chemical vapor deposition (HFCVD). The Si substrate was negatively biased and the tungsten (W) filaments were positively biased relative to the grounded stainless steel reactor wall. It was found that by directly applying such a negative bias to the Si substrate in a typical HFCVD process, the enhanced diamond nucleation occurred only along the edges of the Si wafer. This resulted in an extremely nonuniform nucleation pattern. Several modifications were introduced to the design of the substrate holder, including a metal wire-mesh inserted between the filaments and the substrate, in the aim of making the impinging ion flux more uniformly distributed across the substrate surface. With such improved growth system designs, uniform enhancement of diamond nucleation across the substrate surface was realized. In addition, the use of certain metallic wire mesh sizes during biasing also enabled patterned or selective diamond deposition.

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