Optical orientation in p-doped semiconductor structures with a split valence band

JETP Letters ◽  
1997 ◽  
Vol 65 (12) ◽  
pp. 909-914 ◽  
Author(s):  
E. P. German ◽  
A. V. Subashiev
Keyword(s):  
Valence Band ◽  
Optical Orientation ◽  
Semiconductor Structures ◽  
Split Valence

scholarly journals Влияние ионов неодима (III) на фотолюминесценцию сульфидов кадмия и цинка в полиакрилатной матрице

2022 ◽  
Vol 56 (2) ◽  
pp. 229
Author(s):  
В.П. Смагин ◽  
А.А. Исаева ◽  
Е.А. Шелепова
Keyword(s):  
Methyl Methacrylate ◽  
Valence Band ◽  
Conduction Band ◽  
Structural Defects ◽  
Excitation Spectra ◽  
Nanoscale Particles ◽  
Semiconductor Structures ◽  
Semiconductor Particles ◽  
Optically Transparent

Nanoscale particles ZnS:Nd3+, CdS:Nd3+ and (Zn,Cd)S:Nd3+ were synthesized and doped in a polymerizing methyl methacrylate medium during the production of optically transparent polyacrylate composites of the composition PMMA/ZnS:Nd3+, PMMA/CdS:Nd3+ and PMMA/(Zn,Cd)S:Nd3+. The excitation of photoluminescence (FL) and FL of semiconductor structures in composites is associated with the transition of electrons from the valence band to the conduction band and to the levels of structural defects of semiconductor particles, followed by recombination at these levels. Based on changes in the excitation spectra of FL and FL composites, assumptions are made about the structure of particles, the distribution of Nd3+ ions in it and their effect on photoluminescence.

The optical properties and chemical decomposition of lead iodide

1964 ◽  
Vol 280 (1383) ◽  
pp. 566-585 ◽  
Keyword(s):  
Optical Properties ◽  
Absorption Spectrum ◽  
Valence Band ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Irradiation Damage ◽  
Lead Iodide ◽  
Chemical Decomposition ◽  
Excitation Processes ◽  
Split Valence

The optical properties of lead iodide have been measured and the fundamental absorption spectrum is interpreted in terms of ionization and excitation processes. These processes may be regarded as transitions from a split valence band to the conduction band and to exciton levels lying above and below the minimum of the conduction band. This inter­pretation is supported by measurements of photoconductivity and photodecomposition. Two mechanisms are suggested to explain the occurrence of photodecomposition and electron irradiation damage in this substance.

Near Gap Photoluminescence of GaAs Grown Directly on InP

1989 ◽  
Vol 145 ◽  
Author(s):  
M. Lamont Schnoes ◽  
T.D. Harris ◽  
W.S. Hobson ◽  
R. M. Lum ◽  
J. K. Klingert
Keyword(s):  
Thermal Expansion ◽  
Valence Band ◽  
Spectral Features ◽  
Thermal Expansion Mismatch ◽  
Photoluminescence Excitation ◽  
Carbon Impurity ◽  
The Third ◽  
Inp Substrates ◽  
Split Valence ◽  
Good Agreement

AbstractWe present a detailed photoluminescence and photoluminescence excitation study of GaAs grown directly on InP substrates by MOCVD. Reliable peak assignments are determined. With these peak assignments, we measure strain and strain uniformity, identify impurities, and assess material quality. Most samples exhibit three distinct spectral features. The two highest energy features are the strain split valence band, the third feature is a carbon impurity. The observed splitting is in good agreement with the value predicted from the thermal expansion mismatch.

scholarly journals Optical orientation of electron spins and valence-band spectroscopy in germanium

2015 ◽  
Vol 91 (20) ◽  
Author(s):  
F. Pezzoli ◽  
A. Balocchi ◽  
E. Vitiello ◽  
T. Amand ◽  
X. Marie
Keyword(s):  
Valence Band ◽  
Optical Orientation ◽  
Electron Spins

MAGNETIC PROPERTIES OF fcc Fe THIN FILMS

2000 ◽  
Vol 07 (05n06) ◽  
pp. 667-671 ◽  
Author(s):  
A. KAKIZAKI ◽  
N. KAMAKURRA ◽  
M. SAWADA ◽  
K. HAYASHI ◽  
T. SAITOH
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Core Level ◽  
Ferromagnetic Phase ◽  
Line Shape Analysis ◽  
Probing Depth ◽  
Split Valence

The magnetic properties of fcc Fe thin films with a thickness of 1–11 monolayers (ML) grown at room temperature on fcc Co, which was prepared more than 15 ML on Cu(001), have been studied by spin-resolved core level and valence band photoelectron spectroscopy. The observed exchange split valence band structures show that Fe films below 11 ML are in a high spin ferromagnetic phase. Based on the line shape analysis of 3s core level spectra with a cluster model calculation and considering the probing depth of photoelectron spectroscopy, we demonstrate that in the 5–11 ML region, only the topmost few layers of Fe film reveal ferromagnetism as observed in the Fe/Cu(001) system.

Band-Edge Luminescence of MOCVD GaAs Grown Directly on Silicon

1987 ◽  
Vol 102 ◽  
Author(s):  
M. G. Lamont ◽  
T. D. Harris ◽  
R. Sauer ◽  
R. M. Lum ◽  
J. K. Klingert
Keyword(s):  
Temperature Variation ◽  
Valence Band ◽  
Selective Excitation ◽  
Substrate Thickness ◽  
Spectral Features ◽  
Photoluminescence Excitation ◽  
Si Substrates ◽  
Band Edge Luminescence ◽  
Split Valence ◽  
Thick Layers

ABSTRACTWe report a detailed study using photoluminescence and photoluminescence excitation of MOCVD GaAs grown directly on Si substrates. Temperature variation and selective excitation allow reliable assignment of spectral features. This assignment permits measurements of strain and strain uniformity, identification of impurities, and assessment of general materials quality. In 2–5μm thick layers similar spectra are observed with little variation from substrate character. Most samples show one of the two split valence band features plus defect recombination, always including carbon. Strain uniformity varies widely and correlates with substrate thickness. The range of spectra observed from a variety of samples, and guidelines for interpretation of nonresonantly excited spectra will be discussed.

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