Inter-Valence-Band Hot Hole Laser in Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures

2007 ◽  
Vol 2 (1) ◽  
pp. 51-57 ◽  
Author(s):  
R. E. Peale ◽  
M. V. Dolguikh ◽  
A. V. Muravjov
Keyword(s):  
Valence Band ◽  
Two Dimensional ◽  
Semiconductor Structures

scholarly journals Влияние ионов неодима (III) на фотолюминесценцию сульфидов кадмия и цинка в полиакрилатной матрице

2022 ◽  
Vol 56 (2) ◽  
pp. 229
Author(s):  
В.П. Смагин ◽  
А.А. Исаева ◽  
Е.А. Шелепова
Keyword(s):  
Methyl Methacrylate ◽  
Valence Band ◽  
Conduction Band ◽  
Structural Defects ◽  
Excitation Spectra ◽  
Nanoscale Particles ◽  
Semiconductor Structures ◽  
Semiconductor Particles ◽  
Optically Transparent

Nanoscale particles ZnS:Nd3+, CdS:Nd3+ and (Zn,Cd)S:Nd3+ were synthesized and doped in a polymerizing methyl methacrylate medium during the production of optically transparent polyacrylate composites of the composition PMMA/ZnS:Nd3+, PMMA/CdS:Nd3+ and PMMA/(Zn,Cd)S:Nd3+. The excitation of photoluminescence (FL) and FL of semiconductor structures in composites is associated with the transition of electrons from the valence band to the conduction band and to the levels of structural defects of semiconductor particles, followed by recombination at these levels. Based on changes in the excitation spectra of FL and FL composites, assumptions are made about the structure of particles, the distribution of Nd3+ ions in it and their effect on photoluminescence.

Sensitivity To Disorder Of Graphene-Like Lattices Of Quantum Dots And Antidots In Two-Dimensional Electron Gas

2016 ◽  
Vol 11 (1) ◽  
pp. 80-87
Author(s):  
Olga Tkachenko ◽  
Vitaliy Tkachenko
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Semiconductor Structures ◽  
Dimensional Electron Gas ◽  
Artificial Graphene ◽  
Electronic Channels

We compare three-dimensional electrostatics of semiconductor structures with graphene-like lattices of quantum dots and antidots formed in the plane of the two dimensional electron gas. With lattice constant fixed, the shape of the potential may be tuned so that both lattices have minband spectrum where the second Dirac feature is pronounced and not overlaid by the other states. We show that the lattice of quantum dots is more sensitive to fabrication imperfections, because sources of the disorder are located directly above the electronic channels. Thus the lattices of antidots should be preferred semiconductor artificial graphene candidates.

Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures

1997 ◽  
Vol 56 (15) ◽  
pp. 9565-9574 ◽  
Author(s):  
A. Palma ◽  
A. Godoy ◽  
J. A. Jiménez-Tejada ◽  
J. E. Carceller ◽  
J. A. López-Villanueva
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Time Constants ◽  
Semiconductor Structures ◽  
Random Telegraph Signals

scholarly journals Transport in two-dimensional modulation-doped semiconductor structures

2015 ◽  
Vol 91 (20) ◽  
Author(s):  
S. Das Sarma ◽  
E. H. Hwang ◽  
S. Kodiyalam ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
Two Dimensional ◽  
Semiconductor Structures
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