Electrical characteristics of silicon MOS structure formed by a novel low-temperature thermal oxidation method

1986 ◽  
Vol 22 (1) ◽  
pp. 35-36 ◽  
Author(s):  
J.-H. Yue ◽  
Y. Uchida ◽  
M. Matsumura
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Electrical Characteristics ◽  
Oxidation Method ◽  
Mos Structure

Study on Low-Temperature Oxidation’s Endothermic Character of Coal with Comparative-Oxidation Method

2012 ◽  
Vol 577 ◽  
pp. 39-42
Author(s):  
Chang Lu ◽  
Yuan Qing Liang ◽  
Hui Hui Li
Keyword(s):  
Low Temperature ◽  
Energy Conservation ◽  
Heat Release ◽  
Release Rate ◽  
Coal Sample ◽  
Spontaneous Combustion ◽  
Storage Conditions ◽  
Equation Model ◽  
Oxidation Method ◽  
Temperature Controlled

In this paper air was passed through into one progress temperature-controlled box with coal sample and nitrogen into another as comparison during the procedure of coal’s low-temperature （10～80°C）oxidation . Draw the heating curves and heating rate curve, and equation model is built combined with energy conservation, then concludes the heat release rate of the coal samples in the air conditions. The experimental results show that the condition with air is more close to the storage conditions of coal such as transportation in reality, which is very significant to prevent the spontaneous combustion of coals

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

2018 ◽  
Vol 924 ◽  
pp. 440-443
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Olayiwola Alatise ◽  
Roozbeh Bonyadi ◽  
Philip A. Mawby
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Carrier Lifetime ◽  
Drift Region ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Bipolar Devices ◽  
Minority Carriers

In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.

Non uniform thermal oxidation of SiC and its impact on electrical characteristics

2016 ◽  
Vol 55 (8S2) ◽  
pp. 08PC07 ◽  
Author(s):  
Ryu Nagai ◽  
Ryu Hasunuma ◽  
Kikuo Yamabe
Keyword(s):  
Thermal Oxidation ◽  
Electrical Characteristics

Low-temperature electrical characteristics of Bi3.15Nd0.85Ti3O12 thin films

2007 ◽  
Vol 90 (6) ◽  
pp. 062902 ◽  
Author(s):  
Di Wu ◽  
Guoliang Yuan ◽  
Aidong Li
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electrical Characteristics

scholarly journals Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As

2000 ◽  
Vol 623 ◽  
Author(s):  
J. C. Ferrer ◽  
Z. Liliental-Weber ◽  
H. Reese ◽  
Y.J. Chiu ◽  
E. Hu
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gaas Layer ◽  
Transmission Electron ◽  
Low Temperature Gaas ◽  
Reference Samples ◽  
Thermal Oxidation Process ◽  
Low Temperature Grown Gaas

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

Sign in / Sign up

Export Citation Format

Share Document