Effect of thermal annealing on optical and photoelectric properties of microcrystalline hydrogenated silicon films

A. G. Kazanskii; H. Mell; P. A. Forsh

doi:10.1134/1.1548670

Effect of thermal annealing on optical and photoelectric properties of microcrystalline hydrogenated silicon films

Semiconductors ◽

10.1134/1.1548670 ◽

2003 ◽

Vol 37 (2) ◽

pp. 224-226 ◽

Cited By ~ 1

Author(s):

A. G. Kazanskii ◽

H. Mell ◽

P. A. Forsh

Keyword(s):

Thermal Annealing ◽

Silicon Films ◽

Hydrogenated Silicon ◽

Photoelectric Properties

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Effect of electron irradiation on optical and photoelectric properties of microcrystalline hydrogenated silicon

Semiconductors ◽

10.1134/1.1610122 ◽

2003 ◽

Vol 37 (9) ◽

pp. 1076-1079

Author(s):

A. G. Kazanskii ◽

P. A. Forsh ◽

K. Yu. Khabarova ◽

M. V. Chukichev

Keyword(s):

Electron Irradiation ◽

Hydrogenated Silicon ◽

Photoelectric Properties

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Advanced modeling for optical characterization of amorphous hydrogenated silicon films

Thin Solid Films ◽

10.1016/j.tsf.2013.04.129 ◽

2013 ◽

Vol 541 ◽

pp. 12-16 ◽

Cited By ~ 9

Author(s):

Daniel Franta ◽

David Nečas ◽

Lenka Zajíčková ◽

Ivan Ohlídal ◽

Jiří Stuchlík

Keyword(s):

Optical Characterization ◽

Silicon Films ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon

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Microstructures of Hydrogenated Silicon Films Prepared by Ion Plating

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.775 ◽

1986 ◽

Vol 25 (Part 1, No. 6) ◽

pp. 775-778 ◽

Cited By ~ 6

Author(s):

Hideki Shimizu ◽

Satoshi Mizuno ◽

Mikio Noda

Keyword(s):

Silicon Films ◽

Hydrogenated Silicon ◽

Ion Plating

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The effect of thermal annealing on the grain size and electrical characteristics of arsenic ion‐implanted and laser‐irradiated polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.329542 ◽

1981 ◽

Vol 52 (9) ◽

pp. 5566-5574 ◽

Cited By ~ 1

Author(s):

Kenji Shibata ◽

Shinji Onga

Keyword(s):

Grain Size ◽

Thermal Annealing ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Electrical Characteristics ◽

Polycrystalline Silicon Films ◽

Ion Implanted

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Evolution of microstructures in hydrogenated silicon films prepared by diluted‐hydrogen and hydrogen‐atom‐treatment methods

Journal of Applied Physics ◽

10.1063/1.353799 ◽

1993 ◽

Vol 73 (10) ◽

pp. 4841-4847 ◽

Cited By ~ 7

Author(s):

Kuo‐Chiang Hsu ◽

Hua Chang ◽

Huey‐Liang Hwang

Keyword(s):

Hydrogen Atom ◽

Silicon Films ◽

Treatment Methods ◽

Hydrogenated Silicon

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Anisotropy of optical, electrical, and photoelectrical properties of amorphous hydrogenated silicon films modified by femtosecond laser irradiation

Technical Physics ◽

10.1134/s1063784217060020 ◽

2017 ◽

Vol 62 (6) ◽

pp. 925-929 ◽

Cited By ~ 7

Author(s):

D. V. Amasev ◽

M. V. Khenkin ◽

R. Drevinskas ◽

P. Kazansky ◽

A. G. Kazanskii

Keyword(s):

Femtosecond Laser ◽

Laser Irradiation ◽

Silicon Films ◽

Femtosecond Laser Irradiation ◽

Hydrogenated Silicon ◽

Photoelectrical Properties ◽

Amorphous Hydrogenated Silicon

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Linear-Focused ArF Excimer Laser Beam for Depositing Hydrogenated Silicon Films

Springer Series in Chemical Physics - Laser Processing and Diagnostics ◽

10.1007/978-3-642-82381-7_33 ◽

1984 ◽

pp. 252-256 ◽

Cited By ~ 8

Author(s):

M. Murahara ◽

K. Toyoda

Keyword(s):

Laser Beam ◽

Excimer Laser ◽

Silicon Films ◽

Hydrogenated Silicon ◽

Arf Excimer Laser

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Distributed Simulation of Amorphous Hydrogenated Silicon Films: Numerical Experiments on a Linux Based Computing Environment

Computational Science — ICCS 2001 - Lecture Notes in Computer Science ◽

10.1007/3-540-45545-0_57 ◽

2001 ◽

pp. 483-491

Author(s):

Y. E. Gorbachev ◽

M. A. Zatevakhin ◽

V. V. Krzhizhanovskaya ◽

A. A. Ignatiev ◽

V. Kh. Protopopov ◽

...

Keyword(s):

Numerical Experiments ◽

Distributed Simulation ◽

Silicon Films ◽

Computing Environment ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon

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Fluorinated hydrogenated silicon films

Thin Solid Films ◽

10.1016/0040-6090(90)90155-7 ◽

1990 ◽

Vol 186 (2) ◽

pp. L47-L50

Author(s):

D.H. Zhang ◽

D. Haneman

Keyword(s):

Silicon Films ◽

Hydrogenated Silicon

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Reduction in GaAs interfacial defects via structural phase variation of hydrogenated silicon films

Infrared Physics & Technology ◽

10.1016/j.infrared.2020.103534 ◽

2020 ◽

Vol 111 ◽

pp. 103534

Author(s):

Duy Phong Pham ◽

Taeyong Kim ◽

Sunhwa Lee ◽

Junsin Yi

Keyword(s):

Structural Phase ◽

Phase Variation ◽

Silicon Films ◽

Hydrogenated Silicon ◽

Interfacial Defects

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