Evolution of microstructures in hydrogenated silicon films prepared by diluted‐hydrogen and hydrogen‐atom‐treatment methods

1993 ◽  
Vol 73 (10) ◽  
pp. 4841-4847 ◽  
Author(s):  
Kuo‐Chiang Hsu ◽  
Hua Chang ◽  
Huey‐Liang Hwang
1992 ◽  
Vol 283 ◽  
Author(s):  
K. C. Hsu ◽  
H. Chang ◽  
H. L. Hwang

ABSTRACTThe silicon—hydrogen bonding configuration studies of hydrogenated silicon films that were fabricated by diluted—hydrogen and hydrogen—atom—treatment methods are presented. The diluted—hydrogen samples tend to show a very sharp line—shape in the NMR spectra as the H2/SiH4 dilution ratio is increased and/or temperature is elevated. The addition of atomic hydrogen treatment can produce the same NMR spectra at a temperature lower than 200°C. The Raman scattering spectra show that the μc—Si phase can be formed by the atomic hydrogen treatment. The infrared absorption spectra also indicate an increase of SiH2 bonding configuration and a hydrogen content reduction when atomic hydrogen treatment is employed. These results suggest that the degree of crystallinity of hydrogenated silicon films can be systematically adjusted.


2013 ◽  
Vol 541 ◽  
pp. 12-16 ◽  
Author(s):  
Daniel Franta ◽  
David Nečas ◽  
Lenka Zajíčková ◽  
Ivan Ohlídal ◽  
Jiří Stuchlík

1986 ◽  
Vol 25 (Part 1, No. 6) ◽  
pp. 775-778 ◽  
Author(s):  
Hideki Shimizu ◽  
Satoshi Mizuno ◽  
Mikio Noda

1990 ◽  
Vol 186 (2) ◽  
pp. L47-L50
Author(s):  
D.H. Zhang ◽  
D. Haneman

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