Effect of electron irradiation on optical and photoelectric properties of microcrystalline hydrogenated silicon

2003 ◽  
Vol 37 (9) ◽  
pp. 1076-1079
Author(s):  
A. G. Kazanskii ◽  
P. A. Forsh ◽  
K. Yu. Khabarova ◽  
M. V. Chukichev
Keyword(s):  
Electron Irradiation ◽  
Hydrogenated Silicon ◽  
Photoelectric Properties

Effect of electron irradiation on dark and photoconductivity of amorphous hydrogenated silicon

1981 ◽  
Vol 24 (12) ◽  
pp. 7443-7446 ◽  
Author(s):  
R. V. Navkhandewala ◽  
K. L. Narasimhan ◽  
S. Guha
Keyword(s):  
Electron Irradiation ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

ELECTRON IRRADIATION IN AMORPHOUS HYDROGENATED SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-803-C4-806
Author(s):  
R. V. Navkhandewala ◽  
K. L. Narasimhan ◽  
S. Guha
Keyword(s):  
Electron Irradiation ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb

2019 ◽  
Vol 132 ◽  
pp. 26-30 ◽  
Author(s):  
Dengkui Wang ◽  
Bingkun Chen ◽  
Zhipeng Wei ◽  
Xuan Fang ◽  
Jilong Tang ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Photoelectric Properties ◽  
Induced Defects ◽  
Irradiation Induced Defects

Evaluation of single-electron movies of glutamine synthetase molecules

1983 ◽  
Vol 41 ◽  
pp. 280-281
Author(s):  
W. Kunath ◽  
E. Zeitler ◽  
M. Kessel
Keyword(s):  
Electron Microscope ◽  
Glutamine Synthetase ◽  
Electron Irradiation ◽  
Structural Damage ◽  
Structural Changes ◽  
Single Electron ◽  
Continuous Series ◽  
Digital Recording ◽  
Recording Device ◽  
Low Exposure

The features of digital recording of a continuous series (movie) of singleelectron TV frames are reported. The technique is used to investigate structural changes in negatively stained glutamine synthetase molecules (GS) during electron irradiation and, as an ultimate goal, to look for the molecules' “undamaged” structure, say, after a 1 e/Å2 dose.The TV frame of fig. la shows an image of 5 glutamine synthetase molecules exposed to 1/150 e/Å2. Every single electron is recorded as a unit signal in a 256 ×256 field. The extremely low exposure of a single TV frame as dictated by the single-electron recording device including the electron microscope requires accumulation of 150 TV frames into one frame (fig. lb) thus achieving a reasonable compromise between the conflicting aspects of exposure time per frame of 3 sec. vs. object drift of less than 1 Å, and exposure per frame of 1 e/Å2 vs. rate of structural damage.

Radiation-Induced Precipitation at Thin Foil Surfaces in Ni-Be Alloys

1982 ◽  
Vol 40 ◽  
pp. 598-599
Author(s):  
T. Mukai ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Electron Irradiation ◽  
High Vacuum ◽  
Thin Foil ◽  
Homogeneous Precipitation ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Radiation Induced

Radiation-induced homogeneous precipitation in Ni-Be alloys was recently observed by high voltage electron microscopy. A coupling of interstitial flux with solute Be atoms is responsible for the precipitation. The present investigation further shows that precipitation is also induced at thin foil surfaces by electron irradiation under a high vacuum.

Void-Lattice Formation in Natural Fluorite by Electron Irradiation

1976 ◽  
Vol 34 ◽  
pp. 614-615 ◽  
Author(s):  
L.E. Murr
Keyword(s):  
Electron Microscope ◽  
Electron Irradiation ◽  
Heavy Ion ◽  
High Energy ◽  
Stoichiometric Ratio ◽  
Direct Observations ◽  
Transmission Electron ◽  
Anion Vacancies ◽  
Cation And Anion Vacancies ◽  
Lattice Formation

The production of void lattices in metals as a result of displacement damage associated with high energy and heavy ion bombardment is now well documented. More recently, Murr has shown that a void lattice can be developed in natural (colored) fluorites observed in the transmission electron microscope. These were the first observations of a void lattice in an irradiated nonmetal, and the first, direct observations of color-center aggregates. Clinard, et al. have also recently observed a void lattice (described as a high density of aligned "pores") in neutron irradiated Al2O3 and Y2O3. In this latter work, itwas pointed out that in order that a cavity be formed,a near-stoichiometric ratio of cation and anion vacancies must aggregate. It was reasoned that two other alternatives to explain the pores were cation metal colloids and highpressure anion gas bubbles.Evans has proposed that void lattices result from the presence of a pre-existing impurity lattice, and predicted that the formation of a void lattice should restrict swelling in irradiated materials because it represents a state of saturation.

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