On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers

2000 ◽  
Vol 34 (12) ◽  
pp. 1397-1401 ◽  
Author(s):  
A. Yu. Leshko ◽  
A. V. Lyutetskii ◽  
N. A. Pikhtin ◽  
G. V. Skrynnikov ◽  
Z. N. Sokolova ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Quantum Well Lasers

scholarly journals Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097169 ◽  
Author(s):  
Daisuke Iida ◽  
Ahmed Fadil ◽  
Yuntian Chen ◽  
Yiyu Ou ◽  
Oleksii Kopylov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Ag Nanoparticles ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Quantum Well Structures

Characteristics and Growth of Strained-Layer InGaAs/GaInAsP/GaInP Quantum Well Lasers

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
J. Näppi ◽  
H. Asonen
Keyword(s):  
Quantum Well ◽  
Internal Quantum Efficiency ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Field Pattern ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Waveguide Loss ◽  
Far Field Pattern

ABSTRACTStrained-layer InGaAs/GalnAsP/GalnP separate-confinement-heterostructure quantum well lasers emitting at 980 nm have been developed. The lowest threshold current densities obtained for the single-quantum-well and three-quantum-well lasers are 72 and 150 A/cm2, respectively. The internal quantum efficiency is as high as 94 %, and the internal waveguide loss 5.4 cm−1. The transparency current density and gain coefficient are 33 A/cm2 per well and 0.091 μm A−1, respectively. High characteristic temperatures ranging from 220 to 280 K was obtained. The vertical and lateral full-width at half-maximum of the far-field pattern of the ridge waveguide laser are 47° and 13°, respectively. The results are comparable with the best values reported for the InGaAs/AlGaAs lasers.

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