Very high characteristic temperature and constant differential quantum efficiency 1.3 µm GaInAsP/InP strained-layer quantum well lasers by use of temperature dependent refrectivity (TDR) mirror

1994 ◽  
Vol 30 (13) ◽  
pp. 1064-1065 ◽  
Author(s):  
A. Kasukawa ◽  
N. Iwai ◽  
N. Yamanaka
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Characteristic Temperature ◽  
Quantum Well Lasers ◽  
Temperature Dependent ◽  
Strained Layer ◽  
Very High

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Strained Layer

Room-Temperature AlGaAsSb/InGaAsSb Multi-Quantum-Well Lasers with High Characteristic Temperature

2003 ◽  
Vol 20 (8) ◽  
pp. 1376-1378 ◽  
Author(s):  
Zhang Xiong ◽  
Li Ai-Zhen ◽  
Zheng Yan-Lan ◽  
Xu Gang-Yi ◽  
Qi Ming
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Quantum Well Lasers ◽  
Multi Quantum Well
Sign in / Sign up

Export Citation Format

Share Document