Strained‐layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

1989 ◽  
Vol 55 (22) ◽  
pp. 2268-2270 ◽  
Author(s):  
Anders Larsson ◽  
Jeffrey Cody ◽  
Robert J. Lang
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer

Characteristics and Growth of Strained-Layer InGaAs/GaInAsP/GaInP Quantum Well Lasers

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
J. Näppi ◽  
H. Asonen
Keyword(s):  
Quantum Well ◽  
Internal Quantum Efficiency ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Field Pattern ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Waveguide Loss ◽  
Far Field Pattern

ABSTRACTStrained-layer InGaAs/GalnAsP/GalnP separate-confinement-heterostructure quantum well lasers emitting at 980 nm have been developed. The lowest threshold current densities obtained for the single-quantum-well and three-quantum-well lasers are 72 and 150 A/cm2, respectively. The internal quantum efficiency is as high as 94 %, and the internal waveguide loss 5.4 cm−1. The transparency current density and gain coefficient are 33 A/cm2 per well and 0.091 μm A−1, respectively. High characteristic temperatures ranging from 220 to 280 K was obtained. The vertical and lateral full-width at half-maximum of the far-field pattern of the ridge waveguide laser are 47° and 13°, respectively. The results are comparable with the best values reported for the InGaAs/AlGaAs lasers.

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation
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