Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues

2019 ◽  
Vol 126 (7) ◽  
pp. 075703 ◽  
Author(s):  
Christian Frankerl ◽  
Marc P. Hoffmann ◽  
Felix Nippert ◽  
Heng Wang ◽  
Christian Brandl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Carrier Transport ◽  
Internal Quantum Efficiency ◽  
Quantum Well Structures ◽  
Transport Effects ◽  
Multi Quantum Well ◽  
Efficiency Determination

scholarly journals Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097169 ◽  
Author(s):  
Daisuke Iida ◽  
Ahmed Fadil ◽  
Yuntian Chen ◽  
Yiyu Ou ◽  
Oleksii Kopylov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Ag Nanoparticles ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Quantum Well Structures

Impact of carrier diffusion on internal quantum efficiency of InGaN quantum well structures

2022 ◽  
Author(s):  
Kazimieras Nomeika ◽  
Žydrūnas Podlipskas ◽  
Mariamija Nikitina ◽  
Saulius nargelas ◽  
Gintautas Tamulaitis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Large Set ◽  
Carrier Diffusion ◽  
Quantum Well Structures

Internal quantum efficiency (IQE) is studied in a large set of polar and non-polar InGaN/GaN quantum well structures, 57 samples in total. In search for universal factors limiting IQE, the...

Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO2 core-shell nanoparticles

2011 ◽  
Vol 99 (25) ◽  
pp. 251114 ◽  
Author(s):  
Lee-Woon Jang ◽  
Trilochan Sahoo ◽  
Dae-Woo Jeon ◽  
Myoung Kim ◽  
Ju-Won Jeon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Quantum Well Structures ◽  
Efficiency Control ◽  
Core Shell Nanoparticles ◽  
Multi Quantum Well

scholarly journals Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

RSC Advances ◽  
2020 ◽  
Vol 10 (68) ◽  
pp. 41443-41452
Author(s):  
Zhigang Jia ◽  
Xiaodong Hao ◽  
Taiping Lu ◽  
Hailiang Dong ◽  
Zhiwei Jia ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Hybrid Structure ◽  
High Density ◽  
Hybrid Structures ◽  
Barrier Thickness ◽  
Multi Quantum Well

High-density V-shaped pits cause that InGaN/GaN multi-quantum well becomes QD/QW hybrid structure, and the internal quantum efficiency of the hybrid structure is improved by increasing the thickness of GaN barrier.

Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures

2006 ◽  
Vol 88 (19) ◽  
pp. 191108 ◽  
Author(s):  
D. Fuhrmann ◽  
T. Retzlaff ◽  
U. Rossow ◽  
H. Bremers ◽  
A. Hangleiter ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Quantum Well Structures

scholarly journals Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1736 ◽  
Author(s):  
George Christian ◽  
Menno Kappers ◽  
Fabien Massabuau ◽  
Colin Humphreys ◽  
Rachel Oliver ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Thermionic Emission ◽  
Radiative Recombination Rate ◽  
Quantum Well Structures ◽  
Si Doped

In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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