Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

2000 ◽  
Vol 26 (4) ◽  
pp. 298-301 ◽  
Author(s):  
Yu. N. Buzynin ◽  
S. A. Gusev ◽  
V. M. Danil’tsev ◽  
M. N. Drozdov ◽  
Yu. N. Drozdov ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Gaas Substrates ◽  
Porous Gaas

Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

1999 ◽  
Vol 25 (1) ◽  
pp. 1-3 ◽  
Author(s):  
V. V. Mamutin ◽  
V. P. Ulin ◽  
V. V. Tret’yakov ◽  
S. V. Ivanov ◽  
S. G. Konnikov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Cubic Gan ◽  
Porous Gaas

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

2014 ◽  
Vol 306 ◽  
pp. 89-93 ◽  
Author(s):  
G.P. Dimitrakopulos ◽  
C. Bazioti ◽  
J. Grym ◽  
P. Gladkov ◽  
E. Hulicius ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Gaas Substrates ◽  
Dislocation Reduction ◽  
Porous Gaas

Laser Stimulated Growth of Epitaxial Gaas

1982 ◽  
Vol 17 ◽  
Author(s):  
Walter Roth ◽  
Herbert Kräutle ◽  
Annemarie Krings ◽  
Heinz Beneking
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Epitaxial Layers ◽  
Yag Laser ◽  
Single Crystalline ◽  
Epitaxial Gaas ◽  
Temperature Range ◽  
Mocvd Reactor ◽  
Gaas Substrates

ABSTRACTStimulated growth of single crystalline GaAs has been obtained by irradiation of (100) oriented GaAs substrates inside an MOCVD reactor with a pulsed Nd-YAG laser.Process temperatures have been varied between 540°C and 360°C. In the non-irradiated areas, below 480°C substrate temperature the growth rate decreases rapidly, whereas in the irradiated part of the substrate epitaxial layers could be grown in the whole temperature range investigated. Below 450°C, the growth is reaction limited.

Epitaxial growth on porous GaAs substrates

2013 ◽  
Vol 16 (1) ◽  
pp. 59-64 ◽  
Author(s):  
Jan Grym ◽  
Dušan Nohavica ◽  
Petar Gladkov ◽  
Eduard Hulicius ◽  
Jiří Pangrác ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Gaas Substrates ◽  
Porous Gaas

High-resolution X-ray diffraction and electron microscopy study of porous GaAs substrates

2013 ◽  
Author(s):  
Andrey A. Lomov ◽  
Jan Grym ◽  
Dusan Nohavica ◽  
Andrey S. Orehov ◽  
Alexander L. Vasiliev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Porous Gaas

Growth and defects of GaAs and InGaAs films on porous GaAs substrates

2007 ◽  
Vol 515 (10) ◽  
pp. 4445-4449 ◽  
Author(s):  
Alexander N. Buzynin ◽  
Yury N. Buzynin ◽  
Alexander V. Belyaev ◽  
Albert E. Luk'yanov ◽  
Eduard I. Rau
Keyword(s):  
Gaas Substrates ◽  
Porous Gaas
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