Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

2014 ◽  
Vol 306 ◽  
pp. 89-93 ◽  
Author(s):  
G.P. Dimitrakopulos ◽  
C. Bazioti ◽  
J. Grym ◽  
P. Gladkov ◽  
E. Hulicius ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Gaas Substrates ◽  
Dislocation Reduction ◽  
Porous Gaas

Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

2000 ◽  
Vol 26 (4) ◽  
pp. 298-301 ◽  
Author(s):  
Yu. N. Buzynin ◽  
S. A. Gusev ◽  
V. M. Danil’tsev ◽  
M. N. Drozdov ◽  
Yu. N. Drozdov ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Gaas Substrates ◽  
Porous Gaas

Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

1999 ◽  
Vol 25 (1) ◽  
pp. 1-3 ◽  
Author(s):  
V. V. Mamutin ◽  
V. P. Ulin ◽  
V. V. Tret’yakov ◽  
S. V. Ivanov ◽  
S. G. Konnikov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Cubic Gan ◽  
Porous Gaas

Misfit Dislocation Reduction of InxGa1-xN/GaN Heteroepitaxy Using Graded Layer

2012 ◽  
Vol 626 ◽  
pp. 500-503
Author(s):  
Anisul Islam ◽  
Durjoy Dev ◽  
Md. Arafat Hossain ◽  
Md. Rafiqul Islam ◽  
A. Yamamoto
Keyword(s):  
Energy Balance ◽  
Dislocation Density ◽  
Comparative Study ◽  
Misfit Dislocation ◽  
Theoretical Approach ◽  
Energy Balance Model ◽  
Wurtzite Structure ◽  
Balance Model ◽  
Slip Systems ◽  
Dislocation Reduction

The performances of heterostructural devices are often limited by misfit dislocation. In this paper, a theoretical approach for misfit dislocation reduction of wurtzite InxGa1-xN/GaN is presented. The linear and exponential grading techniques have been modeled for the reduction of dislocation. An energy balance model has been taken into consideration and modified for wurtzite structure to evaluate the misfit dislocation density. The value of misfit dislocation has been reduced from 7.112×1010cm-2to 6.19×106cm-2and 7.039×1010cm-2to 6.121×106cm-2at the plane 1/3<> {} and 1/3<>{} respectively for linear grading. In case of exponential grading the dislocation density has been reduced to 2.762×105cm-2for both slip systems. Because of tapered grading coefficient a tapered dislocation profile has been reported in case of exponential grading technique. Finally, a comparative study has been shown among without graded, linear and exponential grading.

Dislocation reduction in InP layers grown on sawtooth-patterned GaAs substrates

1994 ◽  
Vol 137 (3-4) ◽  
pp. 313-318 ◽  
Author(s):  
Yae Okuno ◽  
Toshihiro Kawano ◽  
Masanari Koguchi ◽  
Kuniyasu Nakamura ◽  
Hiroshi Kakibayashi
Keyword(s):  
Gaas Substrates ◽  
Dislocation Reduction

Epitaxial growth on porous GaAs substrates

2013 ◽  
Vol 16 (1) ◽  
pp. 59-64 ◽  
Author(s):  
Jan Grym ◽  
Dušan Nohavica ◽  
Petar Gladkov ◽  
Eduard Hulicius ◽  
Jiří Pangrác ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Gaas Substrates ◽  
Porous Gaas

Control of threading dislocations in lattice-mismatched heteroepitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
L.J. Schowalter ◽  
A.P. Taylor ◽  
J. Petruzzello ◽  
J. Gaines ◽  
D. Olego
Keyword(s):  
Misfit Dislocation ◽  
Gaas Substrate ◽  
Strain Relaxation ◽  
Threading Dislocations ◽  
Practical Applications ◽  
Gaas Substrates ◽  
Mismatched Heteroepitaxy ◽  
Matched Layers ◽  
Heteroepitaxial Layers ◽  
Lattice Matched

ABSTRACTIt is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In1−xGaxAs on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In1−xGaxAs.

High-resolution X-ray diffraction and electron microscopy study of porous GaAs substrates

2013 ◽  
Author(s):  
Andrey A. Lomov ◽  
Jan Grym ◽  
Dusan Nohavica ◽  
Andrey S. Orehov ◽  
Alexander L. Vasiliev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Porous Gaas
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