Growth and defects of GaAs and InGaAs films on porous GaAs substrates

2007 ◽  
Vol 515 (10) ◽  
pp. 4445-4449 ◽  
Author(s):  
Alexander N. Buzynin ◽  
Yury N. Buzynin ◽  
Alexander V. Belyaev ◽  
Albert E. Luk'yanov ◽  
Eduard I. Rau
Keyword(s):  
Gaas Substrates ◽  
Porous Gaas

Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

2000 ◽  
Vol 26 (4) ◽  
pp. 298-301 ◽  
Author(s):  
Yu. N. Buzynin ◽  
S. A. Gusev ◽  
V. M. Danil’tsev ◽  
M. N. Drozdov ◽  
Yu. N. Drozdov ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Gaas Substrates ◽  
Porous Gaas

Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

1999 ◽  
Vol 25 (1) ◽  
pp. 1-3 ◽  
Author(s):  
V. V. Mamutin ◽  
V. P. Ulin ◽  
V. V. Tret’yakov ◽  
S. V. Ivanov ◽  
S. G. Konnikov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Cubic Gan ◽  
Porous Gaas

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

2014 ◽  
Vol 306 ◽  
pp. 89-93 ◽  
Author(s):  
G.P. Dimitrakopulos ◽  
C. Bazioti ◽  
J. Grym ◽  
P. Gladkov ◽  
E. Hulicius ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Gaas Substrates ◽  
Dislocation Reduction ◽  
Porous Gaas

Epitaxial growth on porous GaAs substrates

2013 ◽  
Vol 16 (1) ◽  
pp. 59-64 ◽  
Author(s):  
Jan Grym ◽  
Dušan Nohavica ◽  
Petar Gladkov ◽  
Eduard Hulicius ◽  
Jiří Pangrác ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Gaas Substrates ◽  
Porous Gaas

High-resolution X-ray diffraction and electron microscopy study of porous GaAs substrates

2013 ◽  
Author(s):  
Andrey A. Lomov ◽  
Jan Grym ◽  
Dusan Nohavica ◽  
Andrey S. Orehov ◽  
Alexander L. Vasiliev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Porous Gaas

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

1986 ◽  
Vol 44 ◽  
pp. 816-817
Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Crystal Defects ◽  
Device Performance ◽  
Gaas Wafer ◽  
Surface Charging ◽  
Gaas Substrates ◽  
Voltage Contrast ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

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