Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter

M. Soubra; J. Cygler; G. Mackay

doi:10.1118/1.597314

Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter

Medical Physics ◽

10.1118/1.597314 ◽

1994 ◽

Vol 21 (4) ◽

pp. 567-572 ◽

Cited By ~ 168

Author(s):

M. Soubra ◽

J. Cygler ◽

G. Mackay

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Metal Oxide Silicon ◽

Dual Metal

Download Full-text

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽

10.1021/nl504806s ◽

2015 ◽

Vol 15 (5) ◽

pp. 2958-2964 ◽

Cited By ~ 20

Author(s):

Romain Lavieville ◽

François Triozon ◽

Sylvain Barraud ◽

Andrea Corna ◽

Xavier Jehl ◽

...

Keyword(s):

Quantum Dot ◽

Metal Oxide ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Effect Transistor ◽

Metal Oxide Silicon ◽

Made In

Download Full-text

Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

Thin Solid Films ◽

10.1016/j.tsf.2008.09.031 ◽

2009 ◽

Vol 517 (5) ◽

pp. 1715-1718 ◽

Cited By ~ 11

Author(s):

Y.J. Kuo ◽

T.C. Chang ◽

P.H. Yeh ◽

S.C. Chen ◽

C.H. Dai ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistor ◽

Substrate Current ◽

Effect Transistor ◽

Metal Oxide Silicon

Download Full-text

Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2438 ◽

2004 ◽

Vol 43 (5A) ◽

pp. 2438-2441

Author(s):

Kiju Im ◽

Won-Ju Cho ◽

Chang-Geun Ahn ◽

Jong-Heon Yang ◽

Jihun Oh ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Effect Transistor ◽

Metal Oxide Silicon ◽

Activation Annealing

Download Full-text

A percolation model for random telegraph signals in metal-oxide-silicon field effect transistor drain current

Applied Physics Letters ◽

10.1063/1.2966157 ◽

2008 ◽

Vol 93 (4) ◽

pp. 043517 ◽

Cited By ~ 3

Author(s):

L. Forbes ◽

D. A. Miller

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Percolation Model ◽

Random Telegraph Signals ◽

Effect Transistor ◽

Metal Oxide Silicon

Download Full-text

Heisenberg's Uncertainty Principle and the Gate Capacitance in Quantum Metal Oxide Silicon Field Effect Transistor Devices

Advanced Science Engineering and Medicine ◽

10.1166/asem.2019.2436 ◽

2019 ◽

Vol 11 (10) ◽

pp. 903-906

Author(s):

R. Paul ◽

P.K. Das ◽

M. Mitra ◽

K.P. Ghatak

Keyword(s):

Metal Oxide ◽

Uncertainty Principle ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Capacitance ◽

Effect Transistor ◽

Metal Oxide Silicon ◽

Heisenberg's Uncertainty Principle

Download Full-text

Dual Metal/High-kGate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.084201 ◽

2011 ◽

Vol 50 (8R) ◽

pp. 084201

Author(s):

Yoshiaki Kikuchi ◽

Hitoshi Wakabayashi ◽

Masanori Tsukamoto ◽

Naoki Nagashima

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Effect Transistor ◽

Dual Metal

Download Full-text

A metal‐oxide‐silicon field‐effect transistor made by means of solid‐phase doping

Journal of Applied Physics ◽

10.1063/1.343284 ◽

1989 ◽

Vol 65 (11) ◽

pp. 4435-4437

Author(s):

S. F. Gong ◽

H. T. G. Hentzell ◽

A. Robertsson ◽

J. Strandberg ◽

J. Hagel

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Solid Phase ◽

Effect Transistor ◽

Metal Oxide Silicon

Download Full-text

Impact of NF3-Added Interlayer Dielectric High Density Plasma Process on Hump Effect in Submicron n-type Metal Oxide Silicon Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4998 ◽

2003 ◽

Vol 42 (Part 1, No. 8) ◽

pp. 4998-5001

Author(s):

Joo-Seog Park ◽

Il-Gweon Kim ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Density ◽

Plasma Process ◽

Interlayer Dielectric ◽

Effect Transistor ◽

Metal Oxide Silicon ◽

Density Plasma

Download Full-text

Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure

Journal of Applied Physics ◽

10.1063/1.1332425 ◽

2001 ◽

Vol 89 (3) ◽

pp. 1856 ◽

Cited By ~ 12

Author(s):

Yih-Yin Lin ◽

Yifei Zhang ◽

Jasprit Singh ◽

Robert York ◽

Umesh Mishra

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Structure ◽

Charge Control ◽

Effect Transistor ◽

Metal Oxide Silicon ◽

Gate Tunneling ◽

Ferroelectric Oxide

Download Full-text

Modeling of Time-Dependent Defect Generation during Constant Voltage Stress for Thin Gate Oxides of Submicron Metal–Oxide–Silicon Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.19 ◽

2008 ◽

Vol 47 (1) ◽

pp. 19-22 ◽

Cited By ~ 1

Author(s):

Jae-Sung Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Time Dependent ◽

Constant Voltage ◽

Gate Oxides ◽

Defect Generation ◽

Voltage Stress ◽

Effect Transistor ◽

Metal Oxide Silicon

Download Full-text