High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane

1995 ◽  
Vol 67 (2) ◽  
pp. 259-261 ◽  
Author(s):  
J. Mi ◽  
P. Warren ◽  
P. Letourneau ◽  
M. Judelewicz ◽  
M. Gailhanou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition

High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

1995 ◽  
Vol 66 (11) ◽  
pp. 1373-1375 ◽  
Author(s):  
O. Kordina ◽  
A. Henry ◽  
J. P. Bergman ◽  
N. T. Son ◽  
W. M. Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
High Quality

Synthesis of high-quality graphene films on nickel foils by rapid thermal chemical vapor deposition

Carbon ◽  
2012 ◽  
Vol 50 (2) ◽  
pp. 551-556 ◽  
Author(s):  
L. Huang ◽  
Q.H. Chang ◽  
G.L. Guo ◽  
Y. Liu ◽  
Y.Q. Xie ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition ◽  
Graphene Films

High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition

2009 ◽  
Vol 517 (14) ◽  
pp. 3990-3994 ◽  
Author(s):  
Hyun-Woo Kim ◽  
Keun Wook Shin ◽  
Gun-Do Lee ◽  
Euijoon Yoon
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
High Quality

RTP-CVD of Si Materials and Devices for ULSI Applications

1991 ◽  
Vol 220 ◽  
Author(s):  
D. L. Kwong ◽  
T. Y. Hsieh ◽  
K. H. Jung
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Exposure ◽  
Epitaxial Layers ◽  
High Quality ◽  
Si Epitaxy ◽  
Optical Waveguiding

ABSTRACTRapid thermal processing chemical vapor deposition (RTP-CVD) has received considerable attention because of its ability to reduce many of the processing problems associated with thermal exposure in conventional chemical vapor deposition, while still retaining the ability to grow high quality epitaxial layers. In this paper, the principles of the RTP-CVD system are described, followed by results of experiments on in-situ cleaning, undoped Si epitaxy and in-situ doped Si epitaxy, and selective Si deposition using oxide masks. Our results show that RTP-CVD is capable of growing high quality, epitaxial layers with sharp, dopant transition profiles. Selective deposition was achieved without the use of HC1. We also studied the growth and characterization of GexSi1−x films for optical waveguiding.

Fabrication of high-quality graphene by hot-filament thermal chemical vapor deposition

Carbon ◽  
2015 ◽  
Vol 86 ◽  
pp. 1-11 ◽  
Author(s):  
Syed Muhammad Hafiz ◽  
Su Kong Chong ◽  
Nay Ming Huang ◽  
Saadah Abdul Rahman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Thermal Chemical Vapor Deposition ◽  
Hot Filament

High Quality Si and Sil-xGex, Films and Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD)

1989 ◽  
Vol 146 ◽  
Author(s):  
M. L. Green ◽  
D. Brasen ◽  
H. Temkin ◽  
V. C. Kannan ◽  
H. S. Luftman
Keyword(s):  
Chemical Vapor Deposition ◽  
Heterojunction Bipolar Transistors ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Processing Technique ◽  
Thin Layers ◽  
High Quality ◽  
Power Switching ◽  
Thermal Chemical Vapor Deposition

ABSTRACTRapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in-situ and immediately thereafter deposit epitaxial layers. Very thin layers (<100 Å) can be deposited by either gas or lamp power switching. We report here the growth of high quality Si and Si-Ge layers, both intrinsic and in-situ doped, and the in-situ growth of a heterojunction bipolar transistor. These HJBT's show gains as high as 350 and are promising as microwave transistors. RTCVD processing is a production-worthy technology that will play an important role in the manufacture of future heterostructural devices.

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