Temperature Non-Uniformities During Rapid Thermal Processing Of Patterned Wafers

1990 ◽  
Author(s):  
Peter Vandenabeele ◽  
Karen Maex
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Patterned Wafers

Transient And Spatial Radiative Properties Of Patterned Wafers During Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras
Keyword(s):  
Heat Transfer ◽  
Heat Source ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temporal Variations ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Patterned Wafers ◽  
Thermal Radiative Properties ◽  
Dynamic Variations

AbstractTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

The Effect of Multilayer Patterns on Thermal Stress During Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
Jeffrey P. Hebbi ◽  
Klavs F. Jensen
Keyword(s):  
Plastic Deformation ◽  
Thermal Stress ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Radiative Properties ◽  
Stress Fields ◽  
Transport Models ◽  
Patterned Wafers ◽  
Side Illumination

AbstractMultilayer patterns can lead to temperature non-uniformity and undesirable levels of thermal stress in silicon wafers during rapid thermal processing (RTP). Thermal stress can, in turn, cause problems such as photolithography overlay errors and degraded device performance through plastic deformation. In this work, the temperature and stress fields in patterned wafers are simulated using detailed finite-element based reactor transport models coupled with electromagnetic theory for predicting radiative properties of multilayers. The temperature distributions are then used to predict the stress fields in the wafer and the onset of plastic deformation. Results are presented for two generic two-dimensional axi-symmetric reactors employing single and double side illumination. The effect of patterns and processing parameters are explored, and strategies for avoiding pattern induced plastic deformation are evaluated.

The Effect of Rapid Thermal Processing on the Electrical Characteristics of Polysilicon Gate Mos Capacitors

1987 ◽  
Vol 92 ◽  
Author(s):  
Susan B. Felch ◽  
David T. Hodul ◽  
Mak Salimian Mak Salimian
Keyword(s):  
Ion Implantation ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Mos Capacitors ◽  
Patterned Wafers ◽  
Annealing Conditions ◽  
Rapid Annealing ◽  
Polysilicon Gate ◽  
Annealing Cycle ◽  
Wet Etch

ABSTRACTRapid thermal processing has previously been observed to affect the dielectric integrity of thin oxides.' In order to study this phenomenon in more detail, we have fabricated a set of wafers with 290 Å thick gate oxide and patterned pads of 2000 Å thick doped polysilicon. Some of the pads were patterned with a wet etch, while others were dry etched in a commercial reactive ion etcher (RIE), which is suspected to be a damaging process. To simulate a self-aligned MOS process, some of the patterned wafers were also ion implanted with 70 keV, 2E15 As+/cm2 . Subsequently, all of the wafers were rapidly annealed in a Varian RTP-800 lamp annealer under a variety of conditions (lO00-1100°C, 10-30 sec), and the breakdown characteristics of the MOS capacitors were measured. A few control samples were annealed in a furnace. It was found that the rapid annealing cycle without ion implantation or dry etching caused no deterioration of the oxide quality. However, rapid annealing after either RIE or implantation does result in oxide breakdowns at lower voltages, with those capacitors having higher perimeter-toarea ratios affected to a greater degree. The effect of capacitor shape and annealing conditions on breakdown statistics and uniformity will be presented and discussed in light of possible ion bombardment damage during RIE and oxide charging during ion implantation. Several mechanisms explaining the breakdown properties will be discussed.

Transient and Spatial Radiative Properties of Patterned Wafers during Rapid Thermal Processing

1995 ◽  
Vol 389 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras
Keyword(s):  
Heat Transfer ◽  
Heat Source ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temporal Variations ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Patterned Wafers ◽  
Thermal Radiative Properties ◽  
Dynamic Variations

ABSTRACTTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

Thermal-Radiation Absorption Characteristics of Patterned Wafers During Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis
Keyword(s):  
Thermal Processing ◽  
Radiation Effects ◽  
Spectral Characteristics ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Radiative Properties ◽  
Radiation Absorption ◽  
Transient Effects ◽  
Patterned Wafers ◽  
Absorption Characteristics

ABSTRACTMicroscale radiation effects are responsible for the dependence of absorption and temperature distributions on the geometry of the layering structures and the spectral characteristics of the heat source. The effect of patterned wafers, which may contain several different structures and materials, on the wafer absorption characteristics are investigated for rapid thermal processing. A numerical model to determine the thermal radiative absorptivity of the wafer for different structures and materials is presented for different heating conditions. The resulting transient effects are determined numerically for different rapid thermal processes. The changes in radiative properties for rapid thermal annealing and chemical vapor deposition are investigated for patterned wafers.

Impact of Patterned Layers on Temperature Non-Uniformity during Rapid Thermal Processing for VLSI-Applications

1989 ◽  
Vol 146 ◽  
Author(s):  
P. Vandenabeele ◽  
K. Maex ◽  
R. De Keersmaecker
Keyword(s):  
Thermal Processing ◽  
Large Scale ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Experimental Results ◽  
Time Dependent ◽  
Optical Characteristics ◽  
Large Temperature ◽  
Oxide Layers ◽  
Patterned Wafers

ABSTRACTThe influence of patterned oxide layers on temperature non-uniformity during RTP is studied. It is shown that large temperature non-uniformities (up to 80 °C) can occur during RTP as a consequence of large scale patterns of thick oxides. The dependence of oxide thickness and pattern geometry on temperature non-uniformity over a wafer is studied. A set of simulation programs is developed to calculate the optical characteristics of a wafer inside a chamber and to calculate the time dependent temperature non-uniformities on patterned wafers. The calculated results agree very well with the experimental results. The simulation program was used to define the optimal optical conditions for RTP systems for minimal temperature non-uniformity due to patterned overlayers on Si.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control
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