Optical Waveguides In GaAlAs/GaAs And GalnAs/InP Multiquantum Well Structures

1990 ◽  
Author(s):  
B L. Weiss ◽  
A C. Wismayer ◽  
N J. Whitehead ◽  
W P. Gillin
1989 ◽  
Vol 152 ◽  
Author(s):  
A. C. Wismayer ◽  
B. L. Weiss ◽  
J. S. Roberts

ABSTRACTSi implantation followed by furnace annealing has been used to produce the mixing of GaAs/AlGaAs multiquantum well (MQW) structures grown by MOVPE. Masked implants have been used to fabricate stripe optical waveguides. Results are presented here for the effect of the ion dose and the annealing time and it is shown that complete mixing occurs for a 1015 cm−2 dose of 500 keV Si+ after annealing at 750 °C for two hours. Waveguides fabricated using this process showed a minimum TE mode propagation loss of 33 dB cm−1 at a wavelength of 1.15 μm.


Author(s):  
W. E. Lee

An optical waveguide consists of a several-micron wide channel with a slightly different index of refraction than the host substrate; light can be trapped in the channel by total internal reflection.Optical waveguides can be formed from single-crystal LiNbO3 using the proton exhange technique. In this technique, polished specimens are masked with polycrystal1ine chromium in such a way as to leave 3-13 μm wide channels. These are held in benzoic acid at 249°C for 5 minutes allowing protons to exchange for lithium ions within the channels causing an increase in the refractive index of the channel and creating the waveguide. Unfortunately, optical measurements often reveal a loss in waveguiding ability up to several weeks after exchange.


1985 ◽  
Vol 132 (6) ◽  
pp. 314 ◽  
Author(s):  
J.M. Arnold ◽  
A. Belghoraf ◽  
A. Dendane

1975 ◽  
Vol 11 (22) ◽  
pp. 534
Author(s):  
Shojiro Kawakami ◽  
Shigeo Nishida
Keyword(s):  

1980 ◽  
Vol 16 (11) ◽  
pp. 440 ◽  
Author(s):  
D.N. MacFadyen ◽  
C.R. Stanley ◽  
C.D.W. Wilkinson
Keyword(s):  

1985 ◽  
Vol 21 (4) ◽  
pp. 164 ◽  
Author(s):  
M. Morisaki ◽  
M. Ogura ◽  
N. Hase ◽  
T. Kajiwara
Keyword(s):  

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