Optical Waveguides in GaAs/AlGaAs MQW Structures Formed by Silicon Induced Quantum Well Mixing

1989 ◽  
Vol 152 ◽  
Author(s):  
A. C. Wismayer ◽  
B. L. Weiss ◽  
J. S. Roberts
Keyword(s):  
Quantum Well ◽  
Annealing Time ◽  
Optical Waveguides ◽  
Propagation Loss ◽  
Mode Propagation ◽  
Furnace Annealing ◽  
Te Mode ◽  
Multiquantum Well

ABSTRACTSi implantation followed by furnace annealing has been used to produce the mixing of GaAs/AlGaAs multiquantum well (MQW) structures grown by MOVPE. Masked implants have been used to fabricate stripe optical waveguides. Results are presented here for the effect of the ion dose and the annealing time and it is shown that complete mixing occurs for a 1015 cm−2 dose of 500 keV Si+ after annealing at 750 °C for two hours. Waveguides fabricated using this process showed a minimum TE mode propagation loss of 33 dB cm−1 at a wavelength of 1.15 μm.

scholarly journals Propagation loss on a Si-Slab Waveguide: Simulation revisited

2019 ◽  
Vol 2 (1) ◽  
pp. 76
Author(s):  
Wildan Panji Tresna ◽  
Takeo Maruyama
Keyword(s):  
Optical Waveguide ◽  
Optical Waveguides ◽  
Propagation Loss ◽  
Slab Waveguide ◽  
Core Material ◽  
Light Passing ◽  
Te Mode ◽  
Propagation Of Light ◽  
Waveguide Design ◽  
Material Index

Slab waveguide is one of the simplest types of optical waveguide, the confinement factor is only determined by the thickness of one side so that the propagation of light passing through it will be confined in the material. The slab waveguide is built from Si as the core material and SiO2 as the substrate. The use of various optical waveguides is very dependent on the objectives to be achieved in its application, for it is very important to know the characteristics of each optical waveguide. In this paper the writer wants to know the characteristics of a slab waveguide, specifically with regard to propagation loss. The simulation results show that the propagation loss in the slab waveguide design that the authors propose is around 0.1dB / mm in TE mode conditions. The occurrence of propagation loss in the simulation is likely due to imperfections in determining the effective material index in the design of the slab waveguide.

GaAs/AlGaAs single‐mode optical waveguides with low propagation loss and strong optical confinement

1990 ◽  
Vol 56 (11) ◽  
pp. 990-992 ◽  
Author(s):  
M. Seto ◽  
A. Shahar ◽  
R. J. Deri ◽  
W. J. Tomlinson ◽  
A. Yi‐Yan
Keyword(s):  
Optical Waveguides ◽  
Single Mode ◽  
Propagation Loss ◽  
Optical Confinement

Low‐loss multiple quantum well GaInAs/InP optical waveguides

1989 ◽  
Vol 54 (18) ◽  
pp. 1737-1739 ◽  
Author(s):  
R. J. Deri ◽  
E. Kapon ◽  
R. Bhat ◽  
M. Seto ◽  
K. Kash
Keyword(s):  
Quantum Well ◽  
Optical Waveguides ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Low Loss

Recombination of Localized Excitons in InGaN Single- and Multiquantum-Well Structures

1996 ◽  
Vol 449 ◽  
Author(s):  
S. Chichibu ◽  
T. Azuhata ◽  
T. Sota ◽  
S. Nakamura
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Molar Fraction ◽  
Green Light ◽  
Localized States ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Transmission Electron ◽  
Localized Excitons ◽  
Multiquantum Well

ABSTRACTSpontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

Integrated (Pb,La)(Zr,Ti)O3 Heterostructure Waveguide Devices Fabricated by Solid-Phase Epitaxy

1999 ◽  
Vol 597 ◽  
Author(s):  
K. Nashimoto ◽  
S. Nakamura ◽  
H. Moriyama ◽  
K. Haga ◽  
M. Watanabe ◽  
...  
Keyword(s):  
Low Voltage ◽  
Solid Phase ◽  
Wet Etching ◽  
Propagation Loss ◽  
Beam Deflection ◽  
Solid Phase Epitaxy ◽  
Te Mode ◽  
Tm Mode ◽  
Electro Optic ◽  
Channel Waveguides

AbstractHeterostructures of a Pb(Zr,Ti)O3 (PZT) waveguide/(Pb,La)(Zr,Ti)O3 (PLZT) system buffer layer were grown on a Nb-doped SrTiO3 (Nb:ST) substrate by solid-phase epitaxy. The propagation loss in the PLZT heterostructure waveguides was on the order of I dB/cm. An electro-optic beam deflection device with an ITO prism electrode on the surface of the PLZT heterostructure waveguide presented efficient deflection of the coupled laser beam by applying a voltage between the electrode and the substrate. A beam deflection greater than 10 mrad at 5 V and frequency response as fast as 13 MHz were observed. An apparent electro-optic coefficient as large as 39 pmJV was estimated from the deflection characteristics for the TE mode and TM mode suggesting the polarization independent nature of the PZT waveguide. For integrating the electrooptic PLZT heterostructure waveguides, channel waveguides were fabricated in the PZT waveguides using a simple wet-etching process. Based on a low-voltage drive structure, lowloss waveguide process, and fine patterning process, a fabricated digital matrix switch showed a – 10 dB cross-talk at a voltage as low as 7.5 V.

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