InGaAsP/InP multiquantum-well structure grown by MOCVD

1985 ◽  
Vol 21 (4) ◽  
pp. 164 ◽  
Author(s):  
M. Morisaki ◽  
M. Ogura ◽  
N. Hase ◽  
T. Kajiwara
Keyword(s):  
Multiquantum Well

Reduced turn-on delay time in 1.3 µm InGaAsP/InP n-type modulation-doped strained multiquantum well lasers

1995 ◽  
Vol 31 (10) ◽  
pp. 809-811 ◽  
Author(s):  
K. Nakahara ◽  
A. Niwa ◽  
K. Uomi ◽  
T. Tsuchiya
Keyword(s):  
Delay Time ◽  
Turn On ◽  
Multiquantum Well

Multiquantum well electroabsorption modulators for 80 Gbit/s OTDM systems

1995 ◽  
Vol 31 (16) ◽  
pp. 1370-1371 ◽  
Author(s):  
D.G. Moodie ◽  
L.J. Rivers ◽  
S.D. Perrin ◽  
I.F. Lealman ◽  
M.J. Harlow ◽  
...  
Keyword(s):  
Electroabsorption Modulators ◽  
Multiquantum Well

High power continuous and quasi-continuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers

1997 ◽  
Vol 33 (19) ◽  
pp. 1635 ◽  
Author(s):  
D.Z. Garbuzov ◽  
R.J. Menna ◽  
R.U. Martinelli ◽  
J.H. Abeles ◽  
J.C. Connolly
Keyword(s):  
High Power ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Multiquantum Well

Surface plasmon induced exciton redistribution in ZnCdO/ZnO coaxial multiquantum-well nanowires

2010 ◽  
Vol 97 (8) ◽  
pp. 081107 ◽  
Author(s):  
B. Liu ◽  
C. W. Cheng ◽  
R. Chen ◽  
S. A. Ekahana ◽  
W. F. Yang ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Multiquantum Well
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