Optical Properties Of Microwave-Plasma-Assisted-CVD Diamond Film

Author(s):  
Curtis E. Johnson ◽  
Wayne A. Weimer
1996 ◽  
Vol 47 (7) ◽  
pp. 611-615
Author(s):  
Hiroyuki TANAKA ◽  
Toshiaki TANAKA ◽  
Hideaki SOHMA ◽  
Masato YOSHIDA ◽  
Akira SAKAI ◽  
...  

1994 ◽  
Vol 339 ◽  
Author(s):  
M. A. Plano ◽  
M. D. Moyer ◽  
M. M. Moreno ◽  
D. Black ◽  
H. Burdette ◽  
...  

ABSTRACTA thick homoepitaxial CVD diamond film was grown on a large high temperature, high pressure (HTHP) Ha diamond to study the defects present in the CVD film. The HTHP diamond had dimensions of 6 mm x 6 mm x 0.44 mm. The thickness of the diamond was increased to 0.84 mm by microwave plasma CVD. X-ray topographs were taken before and after growth to compare the defects in CVD diamond to those in the HTHP diamond. Prior to growth the substrate was unstrained and the characteristic microstructure of stacking faults and dislocations was observed. There was also a surface relief, visible optically, on the substrate of lines along the [100] which are probably due to polishing. After deposition of the CVD film, the crystal was strained with the film in tension. The defect structure observed throughout the CVD film followed the surface relief of the substrate. Cathodoluminescence spectra indicate that the film contains nitrogen defect complexes which are not present in the substrate. Cathodoluminescence also indicates that there are more non-radiative recombination centers in the film than in the substrate. Electrical results from transient photoconductivity measurements indicate that while the mobilities of the film and the substrate are comparable, the lifetime is much shorter in the film, possibly reflecting the higher concentration of non-radiative recombination centers.


2010 ◽  
Vol 135 ◽  
pp. 271-276
Author(s):  
Shu Tao Huang ◽  
Li Zhou ◽  
Li Fu Xu

Super-high speed polishing of diamond film is a newly proposed method due to its outstanding features such as low cost and simple apparatus. The interface temperature rise is due to the friction force and the relative sliding velocity between the CVD diamond film and the polishing metal plate surface. In this paper, the interface temperature rise in super-high speed polishing of CVD diamond film was investigated by using the single-point temperature measurement method. Additionally, the influence of polishing plate material on the characteristics of super-high speed polishing has been studied. The results showed that cast iron is not suitable for super-high polishing, while both 0Cr18Ni9 stainless steel and pure titanium can be used for the super-high polishing of CVD diamond film. The quality and efficiency of polishing with 0Cr18Ni9 stainless steel plate is much higher than those of pure titanium, and the material removal rate could reach to 36-51 m/h when the polishing speed and pressure are 100 m/s and 0.17-0.31 MPa, respectively.


2005 ◽  
Vol 71 (12) ◽  
pp. 1541-1547
Author(s):  
Tsuyoshi YOKOSAWA ◽  
Jun-ichiro TAKAGI ◽  
Seiji KATAOKA

2006 ◽  
Vol 22 (2) ◽  
pp. 128-131 ◽  
Author(s):  
Linjun Wang ◽  
Jianmin Liu ◽  
Run Xu ◽  
Hongyan Peng ◽  
Weimin Shi ◽  
...  

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