Effects of vacuum annealing and oxygen ion beam bombarding on the electrical and optical properties of ITO films deposited by E-beam evaporation

2012 ◽  
Author(s):  
Yongqiang Pan ◽  
Lingxia Hang
Keyword(s):  
Optical Properties ◽  
Vacuum Annealing ◽  
Ion Beam ◽  
Electrical And Optical Properties ◽  
Oxygen Ion ◽  
Ito Films

Electrical and optical properties of ITO films deposited by excimer-laser-assisted EB method

1999 ◽  
Author(s):  
Tetsuo Yano ◽  
Masafumi Yoneda ◽  
Toshihiko Ooie ◽  
Munehide Katsumura ◽  
Yoshifumi Suzaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Excimer Laser ◽  
Electrical And Optical Properties ◽  
Ito Films

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Electrical and Optical PROPERTIES OF Co ALLOYED ß-FeSi2 Formed by Ion Beam Synthesis

1993 ◽  
Vol 316 ◽  
Author(s):  
D. Panknin ◽  
W. Henrion ◽  
E. Wieser ◽  
M. Voelskow ◽  
W. Skorupa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Ion Beam ◽  
Cobalt Content ◽  
Band Gap Energy ◽  
Electrical And Optical Properties ◽  
Spreading Resistance ◽  
Gap Energy ◽  
Buried Layers ◽  
Resistance Decrease

ABSTRACTBy subsequent implantation of iron and cobalt into silicon buried layers of semiconducting ß-(Fe1-xCo1-x)Si2 are formed. The band gap energy as well as the spreading resistance decrease with increasing cobalt content. The microstructure of the suicide layers is characterized by XTEM images.

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