Electrical and optical properties of hydrogenated amorphous silicon‐germanium (a‐Si1−xGex: H) films prepared by reactive ion beam sputtering

1989 ◽  
Vol 66 (6) ◽  
pp. 2528-2537 ◽  
Author(s):  
Mohan Krishan Bhan ◽  
L. K. Malhotra ◽  
Subhash C. Kashyap
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Ion Beam ◽  
Hydrogenated Amorphous Silicon ◽  
Ion Beam Sputtering ◽  
Electrical And Optical Properties ◽  
Beam Sputtering ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Preparation of hydrogenated amorphous silicon films by ion beam sputtering

1981 ◽  
Vol 80 (1-3) ◽  
pp. 169-176 ◽  
Author(s):  
Junji Saraie ◽  
Michiya Kobayashi ◽  
Yoshishisa Fujii ◽  
Hiroyuki Matsunami
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Hydrogenated Amorphous

Dual-ion-beam sputtering technique for the production of hydrogenated amorphous silicon

1984 ◽  
Vol 120 (3) ◽  
pp. 215-222 ◽  
Author(s):  
S. Scaglione ◽  
C. Coluzza ◽  
D. Della Sala ◽  
L. Mariucci ◽  
A. Frova ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Hydrogenated Amorphous Silicon ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon deposited by ion-beam sputtering

1981 ◽  
Vol 4 (2) ◽  
pp. 113-118 ◽  
Author(s):  
V.E. Lowe ◽  
N. Henin ◽  
C.-W. Tu ◽  
H. Tavakolian ◽  
J.R. Sites
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Hydrogenated Amorphous Silicon ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Hydrogenated Amorphous

Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Characteristic Energy ◽  
Optical Band Gaps ◽  
Spin Resonance ◽  
Amorphous Silicon Germanium ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

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