A Direct Writing Electron Beam Lithography Based Process For The Realisation Of Optoelectronic Integrated Circuits

1985 ◽  
Author(s):  
W. A. Hughes ◽  
J. A. Barnard
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Electron Beam Lithography ◽  
Direct Writing ◽  
Optoelectronic Integrated Circuits

Proximity Correction for Fabricating a Chirped Diffraction Grating by Direct-Writing Electron-Beam Lithography

2003 ◽  
Vol 42 (Part 1, No. 9A) ◽  
pp. 5602-5606 ◽  
Author(s):  
Masato Okano ◽  
Hisao Kikuta ◽  
Yoshihiko Hirai ◽  
Kazuya Yamamoto ◽  
Tsutom Yotsuya
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Diffraction Grating ◽  
Direct Writing

A Fundamental Study of the Electron Beam Lithography beyond Sub 100nm Process and its Application

2015 ◽  
Vol 1109 ◽  
pp. 617-625
Author(s):  
Shiro Nagaoka ◽  
Hideo Horibe ◽  
Jin Ping Ao ◽  
Seiichi Tagawa
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Electron Beam Lithography ◽  
Layer Structure ◽  
Design Rule ◽  
Process Conditions ◽  
Beam Diameter ◽  
Fundamental Study ◽  
Intrinsic Resolution ◽  
Gan Hfet

It is well known that electron beam lithography is one of the potential candidates to fulfill of the demand of the miniaturization of the design rule of semiconductor integrated circuits beyond sub 100nm size with high reproducibility. It is also a fact that the resolution is recognized to depend on the various factors which are oriented to the machine and process conditions, for example, electron beam diameter, the intensity distribution of the beam itself, the resistance properties polymers, the development conditions, etc. Therefore, it is thought that it is impossible to be derivable directly and unambiguously from the resist material itself. In this study, the intrinsic resolution of the resist polymer was discussed based on the hypothesis that the resolution itself may be able to improve to the same size as the size of an electron beam profile, or less. The bi-layer structure ZEP520A/poly methyl glutar imide (PMGI) was proposed and tested. As for the results achieved, the contrast γ was improved constantly with a reduction in the development time and a decrease in the development temperature. The highest γ value, approximately 18, was obtained during development at the-20°C condition. An approximately 70nm with high aspect ratio pattern which is almost the same size of the beam pattern was obtained. This result provides an understanding how the intrinsic resolution of the resist material should be, and can be applied to other lithography methods. This process was applied to the actual electrode pattern making process. An approximately 100nm width of Copper nanowire as the gate electrode for the AlGaN/GaN HFET was successfully demonstrated. In addition, AlGaN/GaN HFET operated at about 73.5GHz, successfully.

Air-Bridge Electron-Beam Lithography for Coplanar Millimeter Wave Circuits

1992 ◽  
Vol 260 ◽  
Author(s):  
William H. Haydl ◽  
R. J. Bojko ◽  
L. F. Eastman
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Millimeter Wave ◽  
Electron Beam Lithography ◽  
Ultrahigh Frequency ◽  
Turn Around Time ◽  
Low Capacitance ◽  
Beam Technique ◽  
Millimeter Wave Circuits

ABSTRACTIn the development of air bridges for low capacitance crossovers, resists of 3–6μm thickness a e needed, which calls for special alignment techniques. A technique has been developed for an air bridge tec nology, which is realized entirely by electron beam lithography. Such an all-electron-beam technique for sub-micron devices and ultrahigh frequency circuits, results in a fast turn-around-time in the development of integrated circuits.Gold plated air bridges with 20 to 120 pm span, 5–60 μm width, 2.6 pm height, and 2–4 μm thickness, were realized on GaAs and InP.

Direct Writing of Patterned Ceramics Using Electron-Beam Lithography and Metallopolymer Resists

2004 ◽  
Vol 16 (3) ◽  
pp. 215-219 ◽  
Author(s):  
S. B. Clendenning ◽  
S. Aouba ◽  
M. S. Rayat ◽  
D. Grozea ◽  
J. B. Sorge ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Writing
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