Direct-Write Electron Beam Lithography For Integrated Circuits: Submicron Image Reversal Process Of Novolac-Diazo Resist And Its Stability Towards Composite Metallization In Bipolar Gate Arrays For Vlsi

1987 ◽  
Author(s):  
Rao M. Nagarajan ◽  
Steven D. Rask ◽  
Brian R. Lee
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
Gate Arrays ◽  
Reversal Process ◽  
Image Reversal

scholarly journals Arrays of holes fabricated by electron-beam lithography combined with image reversal process using nickel pulse reversal plating

2004 ◽  
Vol 22 (3) ◽  
pp. 1040 ◽  
Author(s):  
Yousef Awad ◽  
Eric Lavallée ◽  
Kien Mun Lau ◽  
Jacques Beauvais ◽  
Dominique Drouin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Reversal Process ◽  
Image Reversal

Fabrication of submicron microwave bipolar transistors by direct write electron beam lithography

1992 ◽  
Vol 19 (1-4) ◽  
pp. 737-740
Author(s):  
M.N. Webster ◽  
A.H. Verbruggen ◽  
J. Romijn ◽  
H.F.F. Jos ◽  
P.M.A. Moors ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Bipolar Transistors ◽  
Direct Write

scholarly journals Resist Design Considerations for Direct Write and Projection Electron-Beam Lithography Technologies.

1996 ◽  
Vol 9 (4) ◽  
pp. 663-675 ◽  
Author(s):  
Anthony E. Novembre ◽  
Regine G. Tarascon ◽  
Steven D. Berger ◽  
Chris J. Biddick ◽  
Myrtle I. Blakey ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
Design Considerations

Application of direct-write electron-beam lithography for deep-submicron fabrication

1996 ◽  
Author(s):  
Shyi-Long Shy ◽  
Jen Y. Yew ◽  
Kazumitsu Nakamura ◽  
Chun-Yen Chang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Deep Submicron ◽  
Direct Write

A Large Range Compliant Nano-Manipulator Supporting Electron Beam Lithography

2022 ◽  
pp. 1-48
Author(s):  
Yijie Liu ◽  
Zhen Zhang
Keyword(s):  
Electron Beam ◽  
Natural Frequency ◽  
High Precision ◽  
Electron Beam Lithography ◽  
Optimization Design ◽  
Large Range ◽  
Direct Write ◽  
Motion Stage ◽  
Cross Axis ◽  
Precision Motion

Abstract Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam (e-beam) to direct write a custom pattern with nanometric accuracy. Due to the very limited field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment. Experimental results demonstrate 1 mm × 1 mm travel range with high linearity, ~ 0.5% cross-axis error and 5 nm resolution. Moreover, the high natural frequency (~ 56 Hz) of the manipulator facilitates it to achieve high-precision motion of EBL.

Fabrication of X-Ray Masks Using the Silicon Direct Write Electron-Beam Lithography Process and Complementary Electron-Sensitive Resists

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4122-4126
Author(s):  
Eric Lavallée ◽  
Jacques Beauvais ◽  
Dominique Drouin ◽  
Mélanie Cloutier ◽  
Pan Yang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
X Ray ◽  
Lithography Process
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